Publications

Publications

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ORCID ID: 0000-0001-6971-2063

ResearcherID: L-5252-2014 

 

Journal Publications

  1. J. Hicks, J. Li, C. Ying, and Ant Ural, “Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks,” Journal of Applied Physics 123, 204309 (2018). [link]  (highlighted in AIP Scilight and selected as a Featured Article) 
  2. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural, “Characterization of graphene gate electrodes for metal-oxide-semiconductor devices,”  MRS Advances 2, 103 (2017). [link]
  3. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural, “Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes,” Applied Physics Letters 109, 223104 (2016). [link]
  4. Y. An, A. Behnam, E. Pop, G. Bosman, and Ant Ural, “Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer,” Journal of Applied Physics 118, 114307 (2015). [link]
  5. Y. An, A. Behnam, E. Pop, and Ant Ural, “Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions,” Applied Physics Letters 102, 013110 (2013). [link]
  6. V. A. Sydoruk, M. V. Petrychuk, Ant Ural, G. Bosman, A. Offenhausser, S. A. Vitusevich, “Noise spectroscopy of transport properties in carbon nanotube field-effect transistors,” Carbon 53, 252 (2013). [link] 
  7. Y. An, H. Rao, G. Bosman and Ant Ural, “Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-Silicon Schottky junctions,” Applied Physics Letters 100, 213102 (2012). [link] 
  8. Y. An, H. Rao, G. Bosman, and Ant Ural, “Characterization of carbon nanotube film-silicon Schottky barrier photodetectors,” Journal of Vacuum Science and Technology B 30, 021805 (2012). [link] 
  9. Y. Choi, M. Michan, J. L. Johnson, A. Naieni, Ant Ural, and A. Nojeh, “Field-emission properties of individual GaN nanowires grown by chemical vapor deposition,” Journal of Applied Physics 111, 044308 (2012). [link] 
  10. Y. Zhou, J. L. Johnson, Ant Ural, and H. Xie, “Localized growth of carbon nanotubes on CMOS substrate at room temperature using maskless post-CMOS processing,” IEEE Transactions on Nanotechnology 11, 16 (2012). [link] 
  11. J. L. Johnson, A. Behnam, Y. An, S. J. Pearton, and Ant Ural, “Experimental study of graphitic nanoribbon films for ammonia sensing,” Journal of Applied Physics 109, 124301 (2011). [link] 
  12. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural, “Electronic transport in graphitic nanoribbon films,” ACS Nano 5, 1617 (2011). [link] 
  13. A. Behnam, N. Arkali Radhakrishna, Z. Wu, and Ant Ural, “Electronic properties of metal-semiconductor and metal-oxide-semiconductor structures composed of carbon nanotube film on silicon,” Applied Physics Letters 97, 233105 (2010). [link] 
  14. A. Behnam, A. Biswas, G. Bosman, and Ant Ural, “Temperature-dependent transport and 1/f noise mechanisms in single-walled carbon nanotube films,” Physical Review B 81, 125407 (2010). [link] 
  15. J. L. Johnson, A. Behnam, S. J. Pearton, and Ant Ural, “Hydrogen sensing using Pd-functionalized multi-layer graphene nanoribbon networks,” Advanced Materials 22, 4877 (2010). [link] 
  16. V. K. Sangwan, A. Behnam, V. W. Ballarotto, M. S. Fuhrer, Ant Ural, and E. D. Williams, “Optimizing transistor performance of percolating carbon nanotube networks,” Applied Physics Letters 97, 043111 (2010). [link] 
  17. J. S. Wright, W. Lim, D. P. Norton, S. J. Pearton, F. Ren, J. L. Johnson, and Ant Ural, “Nitride and oxide semiconductor nanostructured hydrogen gas sensors,” Semiconductor Science and Technology 25, 024002 (2010). [link] 
  18. S. A. Vitusevich, V. A. Sydoruk, M. V. Petrychuk, B. A. Danilchenko, N. Klein, A. Offenhäusser, Ant Ural, and G. Bosman, “Transport properties of single-walled carbon nanotube transistors after gamma radiation treatment,” Journal of Applied Physics 107, 063701 (2010). [link] 
  19. J. Hicks, A. Behnam, and Ant Ural, “A computational study of tunneling-percolation electrical transport in graphene-based nanocomposites,” Applied Physics Letters 95, 213103 (2009). [link] ]
  20. J. Hicks, A. Behnam, and Ant Ural, “Resistivity in percolation networks of one dimensional elements with a length distribution,” Physical Review E 79, 012102 (2009). [link]
  21. Ant Ural, “Electronic properties of carbon nanotube percolation films and nanotube film-semiconductor junctions,” ECS Transactions 19, 43 (2009). [link] 
  22. Y. Choi, J. L. Johnson, and Ant Ural, “Patterned growth of silicon oxide nanowires from iron ion implanted SiO2 substrates,” Nanotechnology 20, 135307 (2009). (cover feature) [link] 
  23. J. S. Wright, W. Lim, B. P. Gila, S. J. Pearton, J. L. Johnson, Ant Ural, and F. Ren, “Hydrogen sensing with Pt-functionalized GaN nanowires,” Sensors and Actuators B: Chemical 140, 196 (2009). [link] 
  24. J. L. Johnson, Y. Choi, Ant Ural, W. Lim, J. S. Wright, B. P. Gila, F. Ren, and S. J. Pearton, “Growth and characterization of GaN nanowires for hydrogen sensors,” Journal of Electronic Materials 38, 490 (2009). [link] 
  25. A. Behnam, G. Bosman, and Ant Ural, “Percolation scaling of 1/f noise in single-walled carbon nanotube films,” Physical Review B 78, 085431 (2008). [link] 
  26. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and Ant Ural, “Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures,” Applied Physics Letters 92, 243116 (2008). [link] 
  27. W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, Ant Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” Applied Physics Letters 93, 072109 (2008). [link] 
  28. A. Behnam, J. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural, “Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film–GaAs Schottky contacts,” Journal of Applied Physics 103, 114315 (2008). [link] 
  29. J. L. Johnson, Y. Choi, and Ant Ural, “GaN nanowire and Ga2O3 nanowire and nanoribbon growth from ion implanted iron catalyst,” Journal of Vacuum Science and Technology B 26, 1841 (2008). [link] 
  30. A. Behnam, J. Guo, and Ant Ural, “Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films,” Journal of Applied Physics 102, 044313 (2007). [link] 
  31. A. Behnam and Ant Ural, “Computational study of geometry-dependent resistivity scaling in single-walled carbon nanotube films,” Physical Review B 75, 125432 (2007). [link] 
  32. A. Behnam, Y. Choi, L. Noriega, Z. Wu, I. Kravchenko, A. G. Rinzler, and Ant Ural, “Nanolithographic patterning of transparent, conductive single-walled carbon nanotube films by inductively coupled plasma reactive ion etching,” Journal of Vacuum Science and Technology B 25, 348 (2007). [link]
  33. Y. Choi, J. Sippel-Oakley, and Ant Ural, “Single-walled carbon nanotube growth from ion implanted Fe catalyst,” Applied Physics Letters 89, 153130 (2006). [link] 
  34. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and Ant Ural, “Micromachined silicon transmission electron microscopy grids for direct characterization of as-grown nanotubes,” Nanotechnology 17, 4635 (2006). [link] 
  35. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and Ant Ural, “Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions,” Applied Physics Letters 89, 093107 (2006). [link] 
  36. A. Nojeh, Ant Ural, R. F. Pease, and H. Dai, “Electric-field-directed growth of carbon nanotubes in two dimensions,” Journal of Vacuum Science & Technology B 22, 3421 (2004). [link] 
  37. Y. Li, D. Mann, M. Rolandi, W. Kim, Ant Ural, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai, “Preferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method,” Nano Letters 4, 317 (2004). [link] 
  38. Ant Ural, Y. Li, and H. Dai, “Electric-field-aligned growth of single-walled carbon nanotubes on surfaces,” Applied Physics Letters 81, 3464 (2002). [link] 
  39. A. Javey, H. Kim, M. Brink, Q. Wang, Ant Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, “High k dielectrics for advanced carbon nanotube transistors and logic,” Nature Materials 1, 241 (2002). [link] 
  40. A. Javey, Q. Wang, Ant Ural, Y. Li, and H. Dai, “Carbon nanotube transistor arrays for multistage complementary logic and ring oscillators,” Nano Letters 2, 929 (2002). [link] 
  41. Ant Ural, P. B. Griffin, and J. D. Plummer, “Atomic-scale diffusion mechanisms via interme­diate species,” Physical Review B 65, 134303 (2002). [link] 
  42. Ant Ural, P. B. Griffin, and J. D. Plummer, “Silicon self-diffusion under extrinsic conditions,” Applied Physics Letters 79, 4328 (2001). [link] 
  43. Ant Ural, P. B. Griffin, and J. D. Plummer, “Ural, Griffin, and Plummer reply,” Physical Review Letters 85, 4836 (2000). [link] 
  44. Ant Ural, P. B. Griffin, and J. D. Plummer, “Self-diffusion in silicon: Similarity between the properties of native point defects,” Physical Review Letters 83, 3454 (1999). [link] 
  45. Ant Ural, P. B. Griffin, and J. D. Plummer, “Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon,” Journal of Applied Physics 85, 6440 (1999). [link]
  46. Ant Ural, P. B. Griffin, and J. D. Plummer, “Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,” Physica B 273, 512 (1999). [link] 
  47. Ant Ural, P. B. Griffin, and J. D. Plummer, “Experimental evidence for a dual vacancy-inter­stitial mechanism of self-diffusion in silicon,” Applied Physics Letters 73, 1706 (1998). [link]

Conference Publications

  1. J. Li, J. Hicks, T.-Y. Tsai, S. Mishra, and Ant Ural, “Role of wire-to-wire junction resistance in percolation resistivity of transparent, conductive metal nanowire networks,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2018).
  2. S. Mishra, J. Li, T.-Y. Tsai, J. Hicks, and Ant Ural, “Monte Carlo simulation of percolation transport in transparent, conductive metal nanowire networks,” presented at NanoFlorida 2018, Melbourne, FL, USA (2018).
  3. Ant Ural, “Graphene/Insulator/Silicon MOS capacitors: Fowler-Nordheim tunneling and quantum capacitance,” presented at Graphene 2018, Dresden, Germany (2018).
  4. J. Li, C. Ying, J. Hicks, and Ant Ural, “Effect of nanowire curviness on the resistivity scaling in one-dimensional metal nanowire networks for transparent conductors,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2017).
  5. R. Lian, Y. An, and Ant Ural, “Effect of graphene quantum capacitance in the presence of charged impurities on the C–V characteristics of graphene gate MOS devices,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2017).
  6. J. Li, C. Ying, J. Hicks, and Ant Ural, “Percolation resistivity in nanostructured transparent conductor networks consisting of curvy nanowires,” presented at the AVS 64th Symposium and Exhibition, Tampa, FL, USA (2017).
  7. R. Lian and Ant Ural, “Capacitance-voltage characteristics of graphene-gate MOS devices: The effect of graphene quantum capacitance,” presented at the AVS 64th Symposium and Exhibition, Tampa, FL, USA (2017).
  8. Ant Ural, “Graphene/Silicon mixed-dimensional van der Waals junctions,” presented at NanoFlorida 2017, Miami, FL, USA (2017). (keynote talk).
  9. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural, “Metal-oxide-semiconductor (MOS) devices with graphene gate electrodes,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, CA, USA (2016).
  10. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural, “Metal-oxide-semiconductor capacitors based on graphene and p-type silicon,” presented at NanoFlorida 2016, Orlando, FL, USA (2016).
  11. Y. An, A. Behnam, G. Bosman, E. Pop, and Ant Ural, “Fabrication and characterization of photodetectors composed of graphene/silicon Schottky junctions,” presented at the 225th Electrochemical Society (ECS) Meeting, Orlando, FL, USA (2014).
  12. Y. An, A. Behnam, E. Pop, and Ant Ural, “Graphene/p-type silicon metal-semiconductor-metal photodetectors,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2013).
  13. Y. An, H. Rao, G. Bosman, and Ant Ural, “Electronic noise in carbon nanotube film-silicon Schottky junction devices,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2012).
  14. V. Sydoruk, M. Petrychuk, Ant Ural, G. Bosman, A. Offenhäusser, and S. A. Vitusevich, “Transition from Schottky barrier determined to low-noise channel transport regime in carbon nanotube field effect transistors,” presented at the 31st International Conference on the Physics of Semiconductors (ICPS 2012), Zurich, Switzerland (2012).
  15. Y. An, J. L. Johnson, A. Behnam, S. J. Pearton, and Ant Ural, “Sensing gas molecules using graphitic nanoribbon films and networks,” presented at the American Physical Society (APS) March Meeting, Dallas, TX, USA (2011).
  16. V. A. Sydoruk, M. V. Petrychuk, A. Offenhäusser, Ant Ural, G. Bosman, and S. A. Vitusevich, “Noise characterization of transport properties in single carbon nanotube field-effect transistors,” presented at the 21st International Conference on Noise and Fluctuations (ICNF 2011), Toronto, Canada (2011).
  17. A. Behnam, N. Arkali Radhakrishna, and Ant Ural, “Characterization of the metal-semiconductor and metal-insulator-semiconductor junctions between single-walled carbon nanotube films and Si substrates,” presented at the 2010 Device Research Conference (DRC), South Bend, IN, USA (2010); 2010 Device Research Conference (DRC) Digest, 141 (2010).
  18. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural, “Low temperature transport in networks based on multi-layer graphene nanoribbons,” presented at the American Physical Society (APS) March Meeting, Portland, OR, USA (2010).
  19. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural, “Characterization of the junction between single-walled carbon nanotube films and silicon substrates,” presented at the American Physical Society (APS) March Meeting, Portland, OR, USA (2010).
  20. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural, “Networks based on graphene nanoribbons: Structure and electronic transport,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2010).
  21. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural, “Single-walled carbon nanotube film-silicon junctions,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2010).
  22. J. L. Johnson, A. Behnam, and Ant Ural, “Electrical and materials characterization of large area, transparent, conductive graphene film networks and their potential for gas sensing,” presented at the Materials Research Society (MRS) Fall Meeting 2009, Boston, MA, USA (2009).
  23. Y. Choi, J. M. Michan, J. L. Johnson, A. K. Naeini, Ant Ural, and A. Nojeh, “Field-emission properties of individual GaN nanowires grown by the vapour-liquid-solid method,” presented at the 14th Annual Meeting of the Pacific Centre for Advanced Materials and Microstructures (PCAMM), Burnaby, British Columbia, Canada (2009).
  24. J. L. Johnson, A. Behnam, J. S. Wright, S. J. Pearton, and Ant Ural, “Large area, transparent, conductive graphene nanoribbon network gas sensors,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL, USA (2009).
  25. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural, “Electrical characterization of the nanoscale interface between single-walled carbon nanotube films and silicon substrates,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL, USA (2009).
  26. Y. Zhou, J. Johnson, Ant Ural, and H. Xie “Carbon nanotube-CMOS integration based on a maskless post-CMOS process,” presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009), Fort Lauderdale, FL, USA (2009).
  27. Ant Ural, “Electronic properties of carbon nanotube films and nanotube film-semiconductor junctions,” presented at the 215th Electrochemical Society (ECS) Meeting, San Francisco, CA, USA (2009). (invited talk); Electrochemical Society (ECS) Transactions 19, 43 (2009).
  28. A. Behnam, G. Bosman, and Ant Ural, “Characterization and modeling of low frequency noise in single-walled carbon nanotube film-based devices,” presented at the 2009 Device Research Conference (DRC), University Park, PA, USA (2009); 2009 Device Research Conference (DRC) Digest, 25 (2009).
  29. A. Behnam, G. Bosman, and Ant Ural, “1/f noise in single-walled carbon nanotube films,” presented at SPIE Photonics West 2009, San Jose, CA, USA (2009); Proceedings of the SPIE – The International Society for Optical Engineering 7204, 72040J (2009).
  30. A. Behnam, Ant Ural, and G. Bosman, “Modeling and measurements of low frequency noise in single-walled carbon nanotube films with bulk and percolation configurations,” presented at the 20th International Conference on Noise and Fluctuations (ICNF 2009), Pisa, Italy (2009). (invited talk); AIP Conference Proceedings 1129, 79 (2009).
  31. E. Cicek, J. L. Johnson, Ant Ural, and G. Bosman, “Defect noise spectroscopy results for GaN nanowires,” presented at the 20th International Conference on Noise and Fluctuations (ICNF 2009), Pisa, Italy (2009); AIP Conference Proceedings 1129, 101 (2009).
  32. J. L. Johnson, Y. Choi, and Ant Ural, “Ion implanted SiO2 substrates for nucleating silicon oxide nanowire growth,” presented at the Materials Research Society (MRS) Spring Meeting 2009, San Francisco, CA, USA (2009); Materials Research Society Symposium Proceedings 1181, 1181-DD07-03 (2009).
  33. J. Hicks, A. Behnam, and Ant Ural, “A computational study of electrical transport in graphene-based films and composites,” presented at the American Physical Society (APS) March Meeting 2009, Pittsburgh, PA, USA (2009).
  34. A. Behnam, G. Bosman, and Ant Ural, “Experimental and computational study of 1/f noise scaling in single-walled carbon nanotube percolation films,” presented at the American Physical Society (APS) March Meeting 2009, Pittsburgh, PA, USA (2009).
  35. W. Lim, J. Wright, B. P. Gila, J. L. Johnson, Ant Ural, T. Anderson, F. Ren, and S. J. Pearton, “Room temperature hydrogen detection using Pd-coated GaN nanowires,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2008).
  36. Y. Zhou, J. Johnson, L. Wu, S. Maley, Ant Ural, and H. Xie, “Design and fabrication of microheaters for localized carbon nanotube growth,” presented at the 8th International Conference on Nanotechnology (IEEE Nano 2008), Arlington, TX, USA (2008); Proceedings of the 8th IEEE Conference on Nanotechnology (NANO), 452 (2008).
  37. Y. Choi, J. L. Johnson, and Ant Ural, “GaN and Ga2O3 nanowire and nanoribbon growth from ion implanted Fe catalyst,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2008).
  38. A. Behnam, J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural, “Metal-Semiconductor-Metal (MSM) photodetectors with single-walled carbon nanotube film Schottky electrodes on GaAs,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA, USA (2008).
  39. J. Hicks, A. Behnam, and Ant Ural, “Monte Carlo simulations of the effect of nanotube length distribution on the percolation resistivity in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, New Orleans, LA, USA (2008).
  40. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural, “Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-Silicon Schottky contacts,” presented at SPIE Photonics West 2008, San Jose, CA, USA (2008); Proceedings of the SPIE – The International Society for Optical Engineering 6885, 68850A (2008).
  41. J. Johnson, A. Behnam, Y. Choi, L. Noriega, G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural, “Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2007); Materials Research Society Symposium Proceedings 1057, 1057-II22-05 (2007).
  42. Ant Ural, A. Behnam, J. Johnson, and Y. Choi, “Percolation transport in single-walled carbon nanotube films: Experiment and Simulation,” presented at SPIE Optics East 2007, Boston, MA, USA (2007). (invited talk); Proceedings of the SPIE – The International Society for Optical Engineering 6769, 67690B (2007).
  43. A. Behnam and Ant Ural, “Electrical characterization and modeling of geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2007).
  44. A. Behnam and Ant Ural, “Geometry-dependent resistivity scaling in single-walled carbon nanotube films,” presented at the American Physical Society (APS) March Meeting, Denver, CO, USA (2007).
  45. Y. Choi and Ant Ural, “Micromachined silicon grids for direct TEM and Raman characterization of CVD grown carbon nanotubes,” presented at SPIE Photonics West 2007, San Jose, CA, USA (2007); Proceedings of the SPIE – The International Society for Optical Engineering 6464, 64640A (2007).
  46. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and Ant Ural, “Micromachined silicon grids for direct TEM characterization of carbon nanotubes grown by CVD,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2006); Materials Research Society Symposium Proceedings 963, 0963-Q20-13 (2006).
  47. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and Ant Ural, “Geometry dependent resistivity in single-walled carbon nanotube films patterned down to submicron dimensions,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2006); Materials Research Society Symposium Proceedings 963, 0963-Q10-55 (2006).
  48. Ant Ural, “Electrical properties of single-walled nanotube films,” presented at SPIE Optics East 2006, Boston, MA, USA (2006). (invited talk); Proceedings of the SPIE – The International Society for Optical Engineering 6370, 63700F (2006).
  49. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and Ant Ural, “Carbon nanotube growth from nanoscale clusters formed by ion implantation,” presented at the Materials Research Society (MRS) Fall Meeting, Boston, MA, USA (2005); Materials Research Society Symposium Proceedings 908, 0908-OO15-03 (2005).
  50. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and Ant Ural, “Carbon nanotube growth from ion-implanted catalyst by chemical vapor deposition,” presented at SPIE Optics East 2005, Boston, MA, USA (2005); Proceedings of the SPIE – The International Society for Optical Engineering 6008, 600805 (2005).
  51. Ant Ural, “Electric field assisted growth and assembly of carbon nanotubes for nanoelectronics and nanosensing applications,” presented at SPIE Optics East 2004, Philadelphia, PA, USA (2004). (invited talk); Proceedings of the SPIE – The International Society for Optical Engineering 5593, 28 (2004).
  52. A. Nojeh, Ant Ural, R. F. Pease, and H. Dai, “Electric-field-directed growth of carbon nanotubes in two dimensions,” presented at the 48th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication (EIPBN 2004), San Diego, CA, USA (2004).
  53. A. Javey, H. Kim, M. Brink, Q. Wang, Ant Ural, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, “High k dielectrics for advanced carbon nanotube transistors and logic,” presented at the American Physical Society (APS) March Meeting, Austin, TX, USA (2003).
  54. Ant Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “Coupled diffusion of dopants,” presented at TECHCON 2000, Phoenix, AZ, USA (2000).
  55. Ant Ural, S. Koh, P. B. Griffin, and J. D. Plummer, “What does self-diffusion tell us about ultra shallow junctions?” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (2000); Materials Research Society Symposium Proceedings 610, B4.11 (2000).
  56. Ant Ural, P. B. Griffin, and J. D. Plummer, “Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,” presented at the 20th International Conference on Defects in Semiconductors (ICDS- 20), Berkeley, CA, USA (1999).
  57. Ant Ural, P. B. Griffin, and J. D. Plummer, “Experimental study of self-diffusion in silicon using isotopically enriched structures,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (1999); Materials Research Society Symposium Proceedings 568, 97 (1999).
  58. P. B. Griffin and Ant Ural, “Interactions between silicon self-diffusion and dopant diffusion,” presented at the 195th Electrochemical Society (ECS) Meeting, Seattle, WA, USA (1999). (invited talk)
  59. S. K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, M. C. Johnson, Ant Ural, and P. B. Griffin, “Linking ab initio energetics to experiment: Kinetic Monte Carlo simulation of transient enhanced diffu­sion of B in Si,” presented at the Materials Research Society (MRS) Spring Meeting, San Francisco, CA, USA (1998); Materials Research Society Symposium Proceedings 538, 291 (1998).

Book Chapters

  1. H. Xie, Y. Zhou, J. Johnson, and Ant Ural, “Monolithic integration of carbon nanotubes and CMOS,” in Graphene, Carbon Nanotubes, and Nanostructures: Techniques and Applications, edited by J. E. Morris and K. Iniewski, CRC Press (2016), p. 131-163.

Patents

  1. H. Xie and Ant Ural, “Room temperature carbon nanotubes integrated on CMOS,” US Patent 8618611 (2013).