{"id":292,"date":"2021-06-04T17:22:14","date_gmt":"2021-06-04T17:22:14","guid":{"rendered":"https:\/\/www.che.ufl.edu\/ren\/?page_id=292"},"modified":"2025-01-28T13:39:16","modified_gmt":"2025-01-28T18:39:16","slug":"patents","status":"publish","type":"page","link":"https:\/\/faculty.eng.ufl.edu\/ren\/research\/patents\/","title":{"rendered":"Patents"},"content":{"rendered":"\n
<\/div>\n\n\n\n
    \n
  1. \u201cQuarternized Titanium-Nitride Anti-Bacterial Coating For Dental Implants\u201d, Esquivel-Upshaw, Ren, Carey, Clark, Batich, US Patent No. 11,864,946 B2 (2024).<\/li>\n\n\n\n
  2. \u201cMethods and Composition for Medial Implants Having Anti-Bacterial Coating\u201d, Esquivel-Upshaw, Clark, Ren, Camarago, US Patent No. 11,752,236 B2 (2023).<\/li>\n\n\n\n
  3. \u201cDielectric Coatings for Fixed and Removable Oral Prosthetic Restorations\u201d, Esquivel-Upshaw, Ren, Clark, US Patent No. 10,813,847 (2020).<\/li>\n\n\n\n
  4. \u201cWater-Insensitive Gas Sensor Using Polymer-Encapsulated Pt-AlGaN\/GaN Diodes\u201d Jang, Pearton and Ren, US Patent No. 10,269,989 (2019).<\/li>\n\n\n\n
  5. \u201cSelf-Heating Semiconductor Transistors\u201d, Ren, Pearton, US 10,504,811 (2019).<\/li>\n\n\n\n
  6. \u201cThermal stable ammonia gas sensor using ZnO-functionalized AlGaN\/GaN heterostructure transistor\u201d, Jang, Ren, Pearton, US 10,488,364 (2019).<\/li>\n\n\n\n
  7. \u201cHigh electron mobility transistors with improved heat dissipation\u201d, Ren, Pearton, Law, Hwang, US 10,312,358 (2019).<\/li>\n\n\n\n
  8. \u201cWireless based marine pathogens detection system\u201d, Ren, Pearton, Wang, Sheppard, US 9,429,573 (2018).<\/li>\n\n\n\n
  9. \u201cSensors using high electron mobility transistors\u201d, Ren Pearton, Lele, Wang, Kang, US 9,316,637 (2016).<\/li>\n\n\n\n
  10. \u201cHigh Electron Mobility Transistors Having Improved Reliability\u201d, Ren, Pearton, Kim US 9,236,433 (2016).<\/li>\n\n\n\n
  11. \u201cMaterials and methods for detecting toxins, pathogens and other biological materials\u201d, Ren, Pearton, Lele US 9,366,654 (2016).<\/li>\n\n\n\n
  12. \u201cChloride Detection\u201d, Ren, Pearton, US 8,836,351 (2014).<\/li>\n\n\n\n
  13. \u201cSensors using high electron mobility transistors\u201d, Ren, Pearton, Lele, Wang Kang US 8,835,984 (2014).<\/li>\n\n\n\n
  14. \u201cSensors using high electron mobility transistors\u201d, Ren, Pearton, Lele, US 8,828,713 (2014).<\/li>\n\n\n\n
  15. \u201cSystem for hydrogen sensing\u201d, Ren, Lin, Norton, Pearton, US 8,578,757 (2013).<\/li>\n\n\n\n
  16. \u201cOxygen and Carbon Dioxide Sensing\u201d, Ren, Pearton. US 8,222,041 (2012).<\/li>\n\n\n\n
  17. \u201cGaN-type enhancement MOSFET using heterostructure\u201d, Abernathy, Irokawa, Pearton, Ren, US 6,914,273 (2005).<\/li>\n\n\n\n
  18. “Air Isolated Crossovers”, Kossives, Tai, Ren, US 6,683,384(2004).<\/li>\n\n\n\n
  19. “Method of Making An Article Comprising An Oxide Layer on A GaAs-Based Semiconductor Body”,
    Chen, Cho, Hong, Hobson, Kuo, Kwo, Murphy, Ren, US 6,271,0698(2001).<\/li>\n\n\n\n
  20. “Method of Forming A T-Shape Gate”, Lothian, Ren, Weiner, US 5,981,319(1999).<\/li>\n\n\n\n
  21. “Article Comprising An Oxide Layer on GaN”, Hong, Hobson, Lothian, Mannaerts, Ren, US 5,912,498(1999).<\/li>\n\n\n\n
  22. “GaAs Based MOSFET, And Method of Making Same”, Cho, Hong, Hobson, Mannaerts, Ren, US 5,903,037(1999).<\/li>\n\n\n\n
  23. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999).<\/li>\n\n\n\n
  24. “Method of making an article comprising an oxide layer on a GaAs-based semiconductor body”, Hong, Hobson, Lothian, Mannaerts, Ren, European 993055128(1999)<\/li>\n\n\n\n
  25. “Improved Air Isolation Crossovers”, Kossives, Tai, Ren, European 98307916(1998).<\/li>\n\n\n\n
  26. “Article Comprising An Oxide Layer on GaN and Method of Making the Article”, Hobson, Hong, Lothian, Mannaerts, Ren, European, 98307928(1998).<\/li>\n\n\n\n
  27. “Manufacture of Field Effect Transistors”, Lothian, Ren, European 98307228(1998).<\/li>\n\n\n\n
  28. “GaAs Based MOSFET,” Cho, Hong, Lothian, Mannaerts, Ren, European 98301154(1998).<\/li>\n\n\n\n
  29. “Article Comprising A Gallium Oxide Layer on A GaAs-Based Semiconductor and Method of Making The Article”,
    Hong, Ren, US 5,821,171(1998).<\/li>\n\n\n\n
  30. “Method of Depositing Thin Passivating Film on Micro-Miniature Semiconductor Device”, Lin, Lothian, and Ren, US 5,620,909(1997).<\/li>\n\n\n\n
  31. “Method of Making A GaAs Based Laser Comprising A Facet Coating”, Chakrabarti, Hobson, Ren, and Schnoes, US 5,668,049(1997).<\/li>\n\n\n\n
  32. “Method for Making In-Containing III\/V Semiconductor Devices,” Hobson, Lopata, and Ren, US 5,527,425(1996).<\/li>\n\n\n\n
  33. “Method for Making In-Containing III\/V Semiconductor Devices,” Hobson, Lopata, and Ren, European 96305099: (1996).<\/li>\n\n\n\n
  34. “Method for Selectively Growing Aluminum-Containing Layers,” Abernathy, Pearton, and Ren, US 5,4569,097(1995).<\/li>\n\n\n\n
  35. “Method for Making Fine-line Semiconductor Devices,” Abernathy, Lothian, Pearton and Ren, European Patent 94301125 (1994).<\/li>\n\n\n\n
  36. “Method for Forming Patterned W Layers,” Fullowan, Pearton and Ren, U.S. 5,176 792(1993) European Patent 92309607.<\/li>\n\n\n\n
  37. “Method for Selectively Growing Ga-containing Layers,” Abernathy, Pearton, Ren and Wisk, U.S. Patent 5,227 006(1993).<\/li>\n\n\n\n
  38. “Method for Selectively Growing Ga-containing Layers,” Abernathy, Pearton, Ren and Wisk, European Patent 92310488(1993).<\/li>\n\n\n\n
  39. “Method for Selectively Growing Al-containing Layers,” Abernathy, Pearton, Ren and Wisk: U.S. Patent 5,459 097(1993).<\/li>\n\n\n\n
  40. “Method for Selectively Growing Al-containing Layers,” Abernathy, Pearton, Ren and Wisk: European Patent 92310487 (1993).<\/li>\n\n\n\n
  41. “Method of Makinf Semiconductor Devices,” Fullowan, Pearton and Ren, U.S. 5, 168 071(1992).<\/li>\n\n\n\n
  42. “Fabrication of Al-containing Semiconductor Devices,” Abernathy, Hobson, Jordan, Pearton and Ren: European Patent 92301438 (1992).<\/li>\n\n\n\n
  43. “GaAs MESFETs with Enhanced Schottky Barrier,” Emerson and Ren, US 5,106,771 (1992).<\/li>\n\n\n\n
  44. “GaAs Device Fabrication Utilizing Metalorganic Molecular Beam Epitaxy,” Abernathy and Ren, US 5,171,704: (1992).<\/li>\n\n\n\n
  45. “Method for Forming Patterned W Layers,” Fullowan, Pearton and Ren, European Patent 92309607(1992).<\/li>\n\n\n\n
  46. “Method for Selectively Wet Etching Aluminum Gallium Arsenide,” Ren and Shah, US 4,949,540 (1991).<\/li>\n<\/ol>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":468,"featured_media":0,"parent":54,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"page-templates\/page-section-nav.php","meta":{"_acf_changed":false,"inline_featured_image":false,"featured_post":"","footnotes":"","_links_to":"","_links_to_target":""},"class_list":["post-292","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/pages\/292","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/users\/468"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/comments?post=292"}],"version-history":[{"count":1,"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/pages\/292\/revisions"}],"predecessor-version":[{"id":1019,"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/pages\/292\/revisions\/1019"}],"up":[{"embeddable":true,"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/pages\/54"}],"wp:attachment":[{"href":"https:\/\/faculty.eng.ufl.edu\/ren\/wp-json\/wp\/v2\/media?parent=292"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}