Silicon Carbide Cavity Optomechanics

Ultracompact 4H-Silicon Carbide Optomechanical Resonator with fm· Qm Exceeding 1013 Hz

We demonstrated the first integrated 4H-SiC optomechanical resonator on a low-loss SiC-on-insulator platform, achieving an unprecedented fm·Qm product of 1.82×10¹³ Hz at room temperature in ambient conditions. This work establishes 4H-SiCOI as a premier platform for chip-scale quantum optomechanics, precision metrology, and operation in extreme environments where conventional materials fail

Single-crystal 3C-SiC-on-insulator platform for integrated quantum photonics

This theoretical work systematically engineered a 3C-SiCOI platform for multi-functional quantum photonic circuits, addressing cavity-QED, nonlinear frequency conversion, and wafer-scale manufacturability. It provides concrete guidelines for realizing SiCOI integrated circuits interfacing quantum emitters with telecommunication networks.

High Q silicon carbide microdisk resonator

We demonstrated 3C-SiC microdisk resonators with intrinsic optical Q up to 5.12×10⁴—the highest reported for SiC at the time—through optimized fabrication. This work establishs 3C-SiC microdisks as promising for integrated quantum photonics

Silicon carbide microdisk resonator

Our first demonstration of a 3C-SiC microdisk optical resonator, establishing the feasibility of the platform. Though early-stage, this work demonstrated SiC’s advantages—high thermal conductivity, wide bandgap, and large refractive index—motivating subsequent platform development.

Nanomechanical and Optomechanical Coupling in Silicon Carbide/Hexagonal Boron Nitride Hybrid Resonator

We created the first SiC/h-BN hybrid optomechanical device, demonstrating strong mechanical coupling between a 3C-SiC microdisk cavity and a van der Waals hexagonal boron nitride nanomechanical resonator. This hybrid approach combines SiC’s wide bandgap with h-BN’s room-temperature single photon emission, opening pathways for cavity quantum electrodynamics and coherent quantum transduction.

Spatial mapping of multimode Brownian motions in high-frequency silicon carbide microdisk resonators

Using ultra-sensitive scanning laser interferometry, we directly measured and spatially mapped undriven thermomechanical (Brownian) vibrations up to the ninth flexural mode in SiC microdisks—achieving displacement sensitivities of 7-14 fm/√Hz. The multimode mapping capability enables new modalities for sensing and reveals rich physics of high-order Brownian motions, with implications for quantum-limited measurements

6H-SiC microdisk torsional resonators in a “smart-cut” technology

We demonstrated high-frequency torsional resonators in 6H-SiC using a “smart-cut” ion-slicing process, achieving mechanical frequencies up to 60 MHz with quality factors reaching 1,280. This work expanded the SiC resonator toolkit beyond flexural modes, with applications in precision sensing and potential for coupling to mechanical degrees of freedom in hybrid quantum systems.

Polytype control of spin qubits in silicon carbide

This collaborative work demonstrated that 4H, 6H, and 3C polytypes of SiC all host coherent, optically addressable defect spin states with room-temperature quantum coherence. It established SiC as a versatile platform where crystal polymorphism enables “designer” spin qubits, directly motivating our subsequent integration of quantum emitters with photonic cavities