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Lamb Wave Resonators

Overview


Lamb waves are elastic waves that travel through thin plates, involving motion through the full thickness of the material. Lamb wave resonators use these waves in thin piezoelectric films—typically aluminum nitride (AlN) or lithium niobate (LiNbO₃)—patterned with metal electrodes to create a mechanical resonance at a desired frequency. Unlike bulk acoustic wave (BAW) devices, the resonant frequency is set by electrode spacing rather than film thickness, making it easy to fabricate multiple frequencies on a single chip.

Lamb wave resonators sit at the intersection of RF filtering and MEMS sensing. For wireless communications, they offer a compact, low-power way to build filters in the MHz-to-GHz range. For sensing, they are highly sensitive to surface mass changes, enabling chemical and biological detection. Their lithographic frequency definition, batch fabrication compatibility, and tunability through material and geometry make them a flexible platform for many applications.

Research today focuses on several key areas. Material development is a major theme: ScAlN and LiNbO₃ offer higher electromechanical coupling than conventional AlN, enabling wider filter bandwidths needed for 5G. Temperature stability is another challenge, typically addressed by adding SiO₂ layers to the resonator stack. On the applications side, researchers are developing Lamb wave filter banks for sub-6 GHz 5G bands (3.3–5 GHz) and exploring sensor arrays for gas detection and biosensing. Quality factor improvement—through better anchor design and surface treatment—is an ongoing effort across all these areas.

Related Papers:

  • Sui W, Feng PXL*, “AlScN‐on‐SiC Microelectromechanical Lamb Wave Resonators Operating at High Temperature up to 800°C”, Applied Physics Letters 125, 022201 (2024). DOI: https://doi.org/10.1063/5.0185606 
  • Sui W, Sheplak M, Feng PXL*, “Gallium Nitride (GaN) MEMS Lamb Wave Resonators Operating At High Temperature Up To 800°C”, Journal of Microelectromechanical Systems 34, In Press (2025).  DOI: https://doi.org/10.1109/MEMS58180.2024.10439555
  • Sui W, Wang H, Lee J, Qamar A, Rais-Zadeh M, Feng PXL*, “AlScN-on-SiC Thin Film Micromachined Resonant Transducers Operating in High-Temperature Environment up to 600°C”, Advanced Functional Materials 32, 2202204 (2022). DOI: https://doi.org/10.1002/adfm.202202204 
  • Sui W, Sheplak M, Feng PXL, “Gallium Nitride (GaN) MEMS Lamb Wave Resonators Operating at High Temperature up to 800° C”, Proc. 37th IEEE Int. Conf. on Micro Electro Mechanical Systems (MEMS 2024), 638-641, Austin TX, January 21-25 (2024).  DOI: https://doi.org/10.1109/MEMS58180.2024.10439555
  • Sui W, Wang H, Lee J, Qamar A, Rais-Zadeh M, and Feng PXL, “AlScN-on-SiC Diaphragm Multimode Micromechanical Resonators for High-Temperature Sensing Applications”, 2022 IMAPS Int. Conference & Exhibition on High Temperature Electronics Network (HiTEN 2022), Oxford, UK & Online (Hybrid), July 18-20 (2022). DOI: https://doi.org/10.4071/001c.89964
  • Sui W, Pearton SJ, Feng PXL*, “A Review on Temperature Coefficient of Frequency (TCf) in Resonant Microelectromechanical Systems (MEMS)”, Applied Physics Reviews 12, 021330 (2025).  DOI: https://doi.org/10.1063/5.0201566