Our research group focuses on studying and developing aluminum scandium nitride (AlScN)-based ferroelectric memories as a platform for advanced computing architectures. Firstly, we investigate the fundamental aspects of AlScN, including its growth methods, structural characteristics, and key material properties. Based on the understanding of material physics, we design and fabricate ferroelectric memory devices. Using the AlScN-based diodes and field-effect transistors, we analyze their ferroelectric properties through measurement of P-E hysteresis loop, C-V and I-V characteristics. Building upon the device characterizations, we further design crossbar array architectures and integrate with peripheral circuitry for in-memory computing applications. This systematic approach effectively bridges each field of materials, devices, and circuit systems.
