Traditional computer chips are hitting a wall. Most modern devices rely on an architecture where memory and processing are kept separate, which creates a bottleneck that slows down performance and wastes energy. To build the next generation of high-performance electronics, we need to rethink the very materials used to build these components.
Our lab focuses on discovering and engineering novel materials that can change how data is stored and processed. By exploring unique physical properties like ferroelectricity at the atomic level, we are developing hardware that is faster, more efficient, and capable of handling the demands of modern AI and edge computing. What this really means is we aren’t just making existing tech better; we are building the foundation for entirely new types of computing systems.
We are investigating Aluminum Scandium Nitride (AlScN) as a scalable material for non-volatile memory. By integrating AlScN into capacitors and transistors, we aim to eliminate data bottlenecks and enable energy-efficient, in-memory computing architectures.
Click to learn more about our research on Ferroelectric AlScN for In-Memory Computing Applications.