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Journal Articles

130. [Adv. Func. Mat.] Yousuf SMEH., Wang Y., Rudawski NG, Feng PXL, “Graphene Trampoline Nanomechanical Resonators with Very High Quality Factors and Broad Dynamic Ranges,” Advanced Functional Materials 35, Issue:48, e72645 (2025). DOI: https://doi.org/10.1002/adfm.72645

129. [Appl. Phys. Rev.] Yang R, Lee J, Feng PXL, “Multimode tunable atomically thin vibrating-channel-transistor resonators with ultra-efficient electromechanical transduction,” Applied Physics Reviews 12, Issue: 3, 031416 (2025).  DOI: https://doi.org/10.1063/5.0238991

128. [Photon. Res.] Liu Y, Sun W, Abiri H, Feng PXL, Li Q, “Ultracompact 4H-silicon carbide optomechanical resonator with fm · Qm exceeding 1013  Hz,” Photonics Research 13, Issue:9, 2531-2538 (2025). DOI: https://doi.org/10.1364/PRJ.567674

127. [Adv. Mater.] Yousuf SMEH, Wang Y, Ramachandran S, Koptur-Palenchar J, Tarantini C, Xiang L, McGill S, Smirnov D, Santos EJG, Feng PXL, Zhang XX, “Mechanical Resonant Sensing of Spin Texture Dynamics in a 2D Antiferromagnet,” Advanced Materials 37, 2420168. DOI: https://doi.org/10.1002/adma.202420168

126. [Appl. Phys. Rev.] Sui W, Pearton SJ, Feng PXL, “A review on temperature coefficient of frequency (TCf) in resonant microelectromechanical systems (MEMS),” Applied Physics Reviews 12, Issue:2, 021330 (2025). DOI: https://doi.org/10.1063/5.0201566   

125. [Adv. Funct. Mater.] Lee J, Chiu HY, Zhao L, Shan J, Feng PXL, “Temperature Compensated Graphene Nanomechanical Resonators,” Advanced Functional Materials 35, Issue:24, 2415708 (2025). DOI: https://doi.org/10.1002/adfm.202415708  

124. [Nat. Electron.] Casilli N, Kim S, Hussein HME, Tetro R, Colombo L, Rinaldi M, Feng PXL, Alù A, Cassella C, “Programmable Threshold Sensing in Wireless Devices Using Ising Dynamics,” Nature Electronics 8, Issue:6, 529–36 (2025). DOI: https://doi.org/10.1038/s41928-025-01392-4.   

123. [Adv. Electron. Mater.] Gaddam V, Dabas SS, Gao J, Spry DJ, Baucom G, Rudawski NG, Yin T, Angerhofer E, Neudeck PG, Kim H, Feng PXL, Sheplak M, & Tabrizian R, “Aluminum Scandium Nitride as a Functional Material at 1000 °C,” Advanced Electronic Materials 11, Issue:6, 1–10 (2025). DOI: https://doi.org/10.1002/aelm.202400849   

122. [arXiv] Yousuf SMEH, Wang Y, Ramachandran S, Koptur-Palenchar J, Tarantini C, Xiang L, McGill S, Smirnov D, Santos EJG, Feng PXL, Zhang XX, “Mechanical resonant sensing of spin texture dynamics in a two-dimensional antiferromagnet,” arXiv preprint arXiv:2503.11793. DOI: https://doi.org/10.48550/arXiv.2503.11793    

121. [JMEMS] Watkins CA, Lee J, McCandless JP, Hall HJ, Feng PXL, “Single-Crystal Silicon Thermal-Piezoresistive Resonators as High-Stability Frequency References,” Journal of Microelectromechanical Systems 34, Issue:1, 15-23 (2025). DOI: 10.1109/JMEMS.2024.3515098. 

120. [Micro & Nano] Yousuf SMEH, Shaw SW, Feng PXL, “Nonlinear coupling of closely spaced modes in atomically thin MoS2 nanoelectromechanical resonators,” Microsystems & Nanoengineering 10, Issue:1, 206 (2024). DOI: https://doi.org/10.1038/s41378-024-00844-9   

119. [JAP] Wang Y, Yousuf SMEH, Zhang XX, Feng PXL, “Two-dimensional FePS3 nanoelectromechanical resonators with local-gate electrostatic tuning at room temperature,” Journal of Applied Physics, 136, Issue:23, 234303 (2024). DOI: https://doi.org/10.1063/5.0243387 

118. [arXiv] Gaddam V, Dabas SS, Gao J, Spry DJ, Baucom G, Rudawski NG, Yin T, Angerhofer E, Neudeck PG, Kim H, Feng PXL, Mark Sheplak, Roozbeh Tabrizian, “Aluminum Scandium Nitride as a Functional Material at 1000°C,” arXiv preprint arXiv:2410.17037 (2024). DOI: https://arxiv.org/abs/2410.17037

117. [JAP] Cheng G, Feng PXL, Guo J, “An efficient device model for ferroelectric thin-film transistors,” Journal of Applied Physics 136, Issue:15, 154502 (2024). DOI: https://doi.org/10.1063/5.0225062   

116. [APL] Sui W, Feng PXL, “AlScN‐on‐SiCmicroelectromechanical Lamb wave resonators operating at high temperature up to 800 °C,” Applied Physics Letters 125, Issue:2, 022201 (2024). DOI: https://doi.org/10.1063/5.0185606   

115. [Preprint] Cassella C, Casilli N, Kim S, Hussein H, Tetro R, Colombo L, Rinaldi M, Feng PXL, Alu A, “Ising Dynamics for Programmable Threshold Sensing in Wireless Devices,” Research Square Preprint (2024). DOI: https://doi.org/10.21203/rs.3.rs-4560737/v1

114. [APL] Kaisar T, Feng PXL, “Noise matching and sensitivity improvement in aluminum nitride nanoelectromechanical resonators via parametric amplification,” Applied Physics Letter 124, Issue:23, 233511 (2024). DOI: https://doi.org/10.1063/5.0193395    

113. [npj Spintron] Zhang B, Lu P, Tabrizian R, Feng PXL, Wu Y, “2D Magnetic heterostructures: spintronics and quantum future,” npj Spintronics  2, Issue:1, 6 (2024). DOI: https://doi.org/10.1038/s44306-024-00011-w 

112. [JAP] Lee J, Wang Y, Zorman CA, Feng PXL, “3C-SiC phononic waveguide for manipulating mechanical wave propagation,” Journal of Applied Physics 135, Issue:20, 204501 (2024). DOI: https://doi.org/10.1063/5.0211534 

111. [PROLA] Casilli N, Kaisar T, Colombo L, Ghosh S, Feng PXL, Cassella C, “Parametric Frequency Divider Based Ising Machines,” Physical Review Online Archive, 132, Issue:14, 147301 (2024). DOI: https://doi.org/10.1103/PhysRevLett.132.147301. 

110. [APL] Wang Y, Lee J, Feng PXL, “Perspectives on phononic waveguides for on-chip classical and quantum transduction,” Applied Physics Letters 124 Issue:7, 070502. DOI: https://doi.org/10.1063/5.0176867 

109. [APL] Yousuf SMEH, Feng PXL, “Atomic layer self-transducing MoS2vibrating channel transistors with 0.5 pm/Hz1/2 displacement sensitivity at room temperature,” Applied Physics Letters 124, Issue:5, 053503. DOI: https://doi.org/10.1063/5.0170127 

108. [Adv. Mat. Tech.] Sui W, Yousuf SMEH, Liu Y, Pearton SJ, Feng PXL, “Surface Adsorption and Air Damping Behavior of β-Ga2O3 Nanomechanical Resonators,” Advanced Materials Technologies, 9, 2301356 (2024). DOI:  https://doi.org/10.1002/admt.202301356   

107. [IEEE PTL] Hwang S, Overmeyer JD, Yousuf SMEH, Carr WN, Feng PXL, Yoon YK, “Silicon Phononic Nanowires Enable Ultra-Low Thermal Conductivity Measured by Raman Spectroscopy,” IEEE Photonics Technology Letters 36, Issue: 5, 325-328 (2024). DOI: 10.1109/LPT.2024.3353283.   

106. [IEEE T-UFFC] Kaisar T, Yousuf SMEH, Lee J, Qamar A, Rais-Zadeh M, Mandal S, Feng PXL, “Five Low-Noise Stable Oscillators Referenced to the Same Multimode AlN/Si MEMS Resonator,” IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control 70, Issue: 10, 1213-1228 (2023). DOI: 10.1109/TUFFC.2023.3312159.   

105. [Book Chapter] Wang Y, Feng PXL,“Quantum Light Sources in Two-Dimensional Materials,” Integrated Nanophotonics: Platforms, Devices, and Applications, 167-207 (2023). DOI: https://doi.org/10.1002/9783527833030.ch5   

104. [Sensors] Sui W, Kaisar T, Wang H, Wu Y, Lee J, Xie H, Feng PXL, “Micromachined Thin Film Ceramic PZT Multimode Resonant Temperature Sensor,” IEEE Sensors Journal 24, Issue: 6, 7273-7283 (2023). DOI: 10.1109/JSEN.2023.3294125.   

103. [JMEMS] Yousuf SMEH, Lee J, Shaw SW, Feng PXL, “Phononic Frequency Combs in Atomically Thin Nanoelectromechanical Resonators Via 1:1 and 2:1 Internal Resonances,” Journal of Microelectromechanical Systems 32, Issue: 4, 335-346 (2023). DOI: 10.1109/JMEMS.2023.3282233. 

102. [Opt. Mat. Exp.] Jia H, McCandless J, Chen H, Liao W, Zhang E, McCurdy M, Reed R, Schrimpf R, Alles M, Feng PXL, “Proton radiation effects on optically transduced silicon carbidemicrodisk resonators,” Optical Materials Express 13, Issue:6, 1797-1807 (2023). DOI: https://doi.org/10.1364/OME.481425      

101. [Small] Ye F, Liu Q, Xu B, Feng PXL, Zhang X, “Ultra-High Interfacial Thermal Conductance via Double hBN Encapsulation for Efficient Thermal Management of 2D Electronics”, Small 19, Issue: 12, 2370073 (2023). DOI: https://doi.org/10.1002/smll.202370073   

100. [IEEE TNS] Lee J, McCurdy MW, Reed RA, Schrimpf RD, Alles MA, Feng PXL*, “In-Situ Measurement of 1.8MeV Proton Radiation Effects on Comb-Drive MEMS Resonators”, IEEE Transactions on Nuclear Science 70, no. 4, 462-468 (2023). DOI: https://doi.org/10.1109/TNS.2022.3233525

99. [Nano Lett.] Kaisar T, Lee J, Li D, Shaw SW, Feng PXL, “Nonlinear Stiffness and Nonlinear Damping in Atomically Thin MoS2 Nanomechanical Resonators”, Nano Letters 22, 24, 9831–9838 (2022). DOI: https://doi.org/10.1021/acs.nanolett.2c02629

98. [Small] Ye F, Islam A, Wang Y, Guo J, Feng PXL, “Phase Transition of MoTe2 Controlled in van der Waals Heterostructure Nanoelectromechanical Systems”, Small 18, xxx-xxxx (2022). DOI: https://doi.org/10.1002/smll.202205327

97. [Micro & Nano] Wang H, Zheng Q, Yang H, Jiang H, Chen Z, Lu Y, Feng PXL, Xie H, “Thin Ceramic PZT Dual- and Multi-Frequency pMUT Arrays for Endoscopic Photoacoustic Imaging”, Microsystems & Nanoengineering 8, art.no.122 (12 pages) (2022). DOI: https://doi.org/10.1038/s41378-022-00449-0

96. [ACS Nano] [Invited Review Article] Xu B, Zhang P, Zhu J, Liu Z, Eichler A, Zheng XQ, Lee J, Dash A, More S, Wu S, Wang Y, Jia H, Naik A, Bachtold A, Yang R, Feng PXL, Wang Z, “Nanomechanical Resonators Toward Atomic Scale”, ACS Nano 16, 15545-15585 (2022). DOI: https://doi.org/10.1021/acsnano.2c01673.

95. [ACS AMI] Zheng XQ, Tharpe T, Yousuf SMEH, Feng PXL, Tabrizian R, “High Quality Factors in Superlattice Ferroelectric Hf0.5Zr0.5O2 Nanoelectromechanical Resonators”, ACS Applied Materials & Interfaces 14, 36807-36814 (2022).  DOI: https://doi.org/10.1021/acsami.2c08414

94. [Nano Lett.] Yang R, Yousuf SMEH, Zhang P, Lee J, Feng PXL*, “A Raman Spectroscopic Probe for Nonlinear MoS2 Nanoelectromechanical Resonators”, Nano Letters 22, 5780-5787 (2022). DOI: 10.1021/acs.nanolett.2c01250

93. [Adv. Func. Mat.] Sui W, Wang H, Lee J, Qamar A, Rais-Zadeh M, Feng PXL*, “AlScN-on-SiC Thin Film Micromachined Resonant Transducers Operating in High-Temperature Environment up to 600°C”, Advanced Functional Materials 32, 2202204 (2022). DOI: https://doi.org/10.1002/adfm.202202204

92. [Sens. & Act.] Guzman P, Dinh T, Qamar A, Lee J, Zheng XQ, Feng PXL, Rais-Zadeh M, Phan HP, Nguyen T, Foisal ARM, Li H, Nguyen NT, Dao DV, “Thermal-Piezoresistive Pumping on Double SiC Layer Resonator for Effective Quality Factor Tuning”, Sensors and Actuators A: Physical 343, 113678 (2022). DOI: https://doi.org/10.1016/j.sna.2022.113678

91. [APL] Lee J, Shaw SW, Feng PXL, “Giant Parametric Amplification and Linewidth Narrowing in Atomically Thin MoS2 Nanomechanical Resonators”, Applied Physics Review 9, 011404 (2022). DOI: https://doi.org/10.1063/5.0045106. [Featured Article]

90. [APL] [Invited Perspective Article] Zheng XQ, Zhao H, Feng PXL, “A Perspective on β-Ga2O3 Micro/Nanoelectromechanical Systems”, Applied Physics Letters 120, 040502 (2022). DOI: https://doi.org/10.1063/5.0073005. [Featured as Editor’s Pick]

89. [IEEE TNS] Sui W, Zheng XQ, Lin J-T, Lee J, Davidson JL, Reed RA, Schrimpf RD, Alphenaar BW, Alles ML, Feng PXL, “Effects of Ion-Induced Displacement Damage on GaN/AlN MEMS Resonators”, IEEE Transactions on Nuclear Science 69, 521-529 (2022). DOI: https://doi.org/10.1109/TNS.2022.3143550.

88. [APL] Lee J, LaHaye MD, Feng PXL, “Design of Strongly Nonlinear Graphene Nanoelectromechanical Systems in Quantum Regime”, Applied Physics Letters 120, 014001 (2022). DOI: https://doi.org/10.1063/5.0069561. [Featured as Cover Article]

87. [ACS Nano] Liu X, Islam A, Yang N, Odhner B, Tupta MA, Guo J, Feng PXL, “Atomic Layer MoTe2 Field-Effect Transistors and Monolithic Logic Circuits Configured by Scanning Laser Annealing”, ACS Nano 15, 19733-19742 (2021). DOI: https://doi.org/10.1021/acsnano.1c07169.

86. [APL] Lee J, Feng PXL, “Self-Sustaining MoS2 Nanomechanical Oscillators and Feedback Cooling”, Applied Physics Letters 119, 243506 (2021). DOI: https://doi.org/10.1063/5.0063079.

85. [Adv. Eng. Mat.] Tharpe T, Zheng XQ, Feng PXL, Tabrizian R, “Resolving Mechanical Properties and Morphology Evolution of Free-Standing Ferroelectric Hf0.5Zr0.5O2”, Advanced Engineering Materials 23, 2101221 (2021). https://doi.org/10.1002/adem.202101221. [Featured as Cover Article]

84. [Nanoscale] Wang Z, Yang R, Feng PXL, “Thermal Hysteresis Controlled Reconfigurable MoS2 Nanomechanical Resonators”, Nanoscale 13, 18089-18095 (2021). DOI: https://doi.org/10.1039/D1NR03286K.

83. [JMEMS] Wang H, Yang H, Chen Z, Zheng Q, Jiang H, Feng PXL, Xie H, “Development of Dual-Frequency pMUT-Arrays Based on Thin Ceramic PZT for Endoscopic Photoacoustic Imaging”, Journal of Microelectromechanical Systems 30, 770-782 (2021). DOI: https://ieeexplore.ieee.org/document/9493855. [Featured as 1 of the 3 “JMEMS RightNow Papers” in the October 2021 Issue]

82. [APL] Zheng XQ, Zhao H, Jia Z, Tao X, Feng PXL, “Young’s Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators”, Applied Physics Letters 119, 013505 (2021). DOI: https://doi.org/10.1063/5.0050421.

81. [JMEMS] Sui W, Zheng XQ, Lin J-T, Alphenaar BW, Feng PXL, “Thermal Response and TCf of GaN/AlN Heterostructure Multimode Micro String Resonators from -10°C up to 325°C”, Journal of Microelectromechanical Systems 30, 521-529 (2021). DOI: https://ieeexplore.ieee.org/document/9464902. [Featured as 1 of the 3 “JMEMS RightNow Papers” in the August 2021 Issue]

80. [Nano Lett.] Ye F, Islam A, Zhang T, Feng PXL, “Ultrawide Frequency Tuning of Atomic Layer van der Waals Heterostructure Electromechanical Resonators”, Nano Letters 21, 5508-5515 (2021).  DOI: https://pubs.acs.org/doi/abs/10.1021/acs.nanolett.1c00610.

79. [APL] Wang Y, Lee J, Berezovsky J, Feng PXL, “Cavity Quantum Electrodynamics Design with Single Photon Emitters in Hexagonal Boron Nitride”, Applied Physics Letters 118, 244003 (2021). DOI: https://aip.scitation.org/doi/full/10.1063/5.0046080.

78. [Opt. Exp.] Wang Y, Lin Q, Feng PXL, “Single-Crystal 3C-SiC-on-Insulator Platform for Integrated Quantum Photonics”, Optics Express 29 (2), 1011-1022 (2021). DOI: https://doi.org/10.1364/OE.413556.

77. [Adv. Mat. Tech.] Xie Y, Lee JS, Wang Y, Feng PXL, “Straining and Tuning Atomic Layer Nanoelectromechanical Resonators via Comb-Drive MEMS Actuators”, Advanced Materials Technologies 6 (2), 2000794 (2021). DOI: https://doi.org/10.1002/admt.202000794. [Highlighted as Inner Cover]

76. [APL]  Zheng XQ, Kaisar T, Feng PXL, “Electromechanical Coupling and Motion Transduction in β-Ga2O3 Vibrating Channel Transistors”, Applied Physics Letters 117, 243504 (2020). DOI: https://doi.org/10.1063/5.0031503.

75. [Small] Yang R, Qian J, Feng PXL, “Electrodynamic Force, Casimir Effect, and Stiction Mitigation in Silicon Carbide Nanoelectromechanical Switches”, Small 16 (51), 2005594 (2020). DOI: https://doi.org/10.1002/smll.202005594.

74. [JMEMS] Chen H, Jia H, Zorman CA, Feng PXL, “Determination of Elastic Modulus of Silicon Carbide (SiC) Thin Diaphragms via Mode-Dependent Duffing Nonlinear Resonances”, Journal of Microelectromechanical Systems 29 (5), 783-789 (2020). DOI: https://doi.org/10.1109/JMEMS.2020.3020568.

73. [Opt. Exp.] Zhou L, Yu X, Feng PXL, Li J, Xie H, “A MEMS Lens Scanner Based on Serpentine Electrothermal Bimorph Actuators for Large Axial Tuning”, Optics Express 28 (16), 23439-23453 (2020). DOI: https://doi.org/10.1364/OE.400363.

72. [ACS Nano] Liu X, Islam A, Guo J, Feng PXL, “Controlling Polarity of MoTe2 Transistors for Monolithic Complementary Logic via Schottky Contact Engineering”, ACS Nano 14, 1457-1467 (2020). DOI: https://pubs.acs.org/doi/abs/10.1021/acsnano.9b05502.

71. [ACS Photon.] Wang Y, Lee J, Zheng XQ, Xie Y, Feng PXL, “Hexagonal Boron Nitride Phononic Crystal Waveguides”, ACS Photonics 6, 3225-3232 (2019). DOI: https://doi.org/10.1021/acsphotonics.9b01094

70. [JMEMS] Jia H, Feng PXL, “Very High Frequency Silicon Carbide Microdisk Resonators with Robust Multimode Responses in Water”, Journal of Microelectromechanical Systems 28, 941-953 (2019). DOI: https://doi.org/10.1109/JMEMS.2019.2920329

69. [JMEMS] Qamar A, Sherrit S, Zheng XQ, Lee J, Feng PXL, Rais-Zadeh M, “Study of Energy Loss Mechanisms in AlN-Based Piezoelectric Length Extensional-Mode Resonators”, Journal of Microelectromechanical Systems 28, 619-627 (2019). DOI: https://doi.org/10.1109/JMEMS.2019.2913875

68. [APL] Chen H, Jia H, Liao W, Pashaei V, Arutt CN, McCurdy MW, Zorman CA, Reed RA, Schrimpf RD, Alles ML, Feng PXL, “Probing Heavy Ion Radiation Effects in SiC via 3D Integrated Multimode Vibrating Diaphragms”, Applied Physics Letters 114, 101901 (2019). DOI: https://doi.org/10.1063/1.5063782 [“Editor’s Pick” Article]

67. [Opt. Mat. Exp.] Wang YN, Zhou V, Xie Y, Zheng XQ, Feng PXL, “Optical Contrast Signatures of Hexagonal Boron Nitride (h-BN) on Device Platform”, Optical Materials Express 9, 1223-1232 (2019). DOI: 10.1364/OME.9.001223 [PDF]

66. [Opt. Mat. Exp.] Islam A, van den Akker A, Feng PXL, “Polarization Sensitive Black Phosphorus Nanomechanical Resonators”, Optical Materials Express 9, 526-535 (2019). DOI: 10.1364/OME.9.000526[PDF]

65. [Invited] [APL Materials] Zheng XQ, Xie Y, Lee JS, Jia ZT, Tao XT, Feng PXL, “Beta Gallium Oxide (β-Ga2O3) Nanoelectromechanical Transducers for Dual-Modality Solar-Blind Ultraviolet Light Detection”, APL Materials 7, 022523 (2019). DOI: 10.1063/1.5054625 [PDF]

64. [Nano Lett.>] Islam A, van den Akker A, Feng PXL, “Anisotropic Thermal Conductivity of Suspended Black Phosphorous Probed by Opto-thermomechanical Resonance Spectromicroscopy”, Nano Letters 18, 7683-7691 (2018). DOI: 10.1021/acs.nanolett.8b03333 [PDF]

63. [IEEE TCAS] Islam MS, Singh SK, Lee JS, Xie Y, Zorman CA, Feng PXL, Mandal S, “A Programmable Sustaining Amplifier for Flexible Multimode MEMS-Referenced Oscillators”, IEEE Transactions on Circuits & Systems I: Regular Papers, (2018). DOI: 10.1109/TCSI.2018.2880675 [PDF]

62. [Invited] [Micromachines] Islam MS, Wei R, Lee JS, Xie Y, Mandal S, Feng PXL, “A Temperature-Compensated Single-Crystal Silicon-on-Insulator (SOI) MEMS Oscillator with a CMOS Amplifier Chip”, Micromachines 9, 559 (2018). DOI: 10.3390/mi9110559 [PDF]

61. [JAP] *Jia H, *Tang H, Feng PXL, “Standard and Inverse Microscale Chladni Figures in Liquids for Dynamic Patterning of Microparticles on Chip”, Journal of Applied Physics 124, 164901 (2018). DOI: 10.1063/1.5050025 [*Equally-contributed authors]. [PDF]

60. [IEEE TED] Li Y, Ye F, Xu J, Zhang W, Feng PXL, Zhang X, “Gate-Tuned Temperature in a Hexagonal Boron Nitride-Encapsulated 2D Semiconductor Device”, IEEE Transactions on Electron Devices 65, 4068-4072 (2018). DOI: 10.1109/TED.2018.2851945 [PDF]

59. [IEEE EDL] Zheng XQ, Lee JS, Rafique S, Karim MR, Han L, Zhao H, Zorman CA, Feng PXL, “β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection”, IEEE Electron Device Letters 39, 1230-1233 (2018). DOI: 10.1109/LED.2018.2850776 [PDF]

58. [ACS Appl. Mat. & Interfaces] Islam A, Du W, Pashaei V, Jia H, Wang ZH, Lee JS, Ye GJ, Chen XH, Feng PXL, “Discerning Black Phosphorus Crystal Orientation and Anisotropy by Polarized Reflectance Measurement”, ACS Applied Materials & Interfaces 10, 25629-25637 (2018). DOI: 10.1021/acsami.8b05408 [PDF]

57. [Invited] [Micromachines] Mei TD, Lee JS, Xu Y, Feng PXL, “Frequency Tuning of Graphene Nanoelectromechanical Resonators via Electrostatic Gating”, Micromachines9, 312 (2018). DOI: 10.3390/mi9060312 [PDF]

56. [ACS Photonics] Islam A, Lee JS, Feng PXL, “Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range”, ACS Photonics 5, 2693-2700 (2018). DOI: 10.1021/acsphotonics.8b00318 [PDF]

55. [Science Advances] *Lee JS, *Wang ZH, He KL, Yang R, Shan J, Feng PXL, “Electrically Tunable Single- and Few-Layer MoS2 Nanoelectromechanical Systems with Broad Dynamic Range”, Science Advances 4, eaao6653 (2018). DOI: 10.1126/sciadv.aao6653 [*Equally-contributed authors]. [PDF]

54. [Nano Lett.] *Ye F, *Lee JS, Feng PXL, “Electrothermally Tunable Graphene Resonators Operating at Very High Temperature up to 1200K”, Nano Letters 18, 1678-1685 (2018). DOI: 10.1021/acs.nanolett.7b04685 [*Equally-contributed authors]. [PDF]

53. [IEEE TPE] Fan S, Wei R, Zhao L, Yang X, Geng L, Feng PXL, “An Ultra-Low Quiescent Power Management System with Maximum Power Point Tracking (MPPT) for Battery-Less Wireless Sensor Applications”, IEEE Transactions on Power Electronics 33, 7326-7337 (2018). DOI: 10.1109/TPEL.2017.2769708 [PDF]

  • “Highlighted Paper” Selected by the IEEE TPE’s Editors

52. [J. Electron. Mater.] Zheng XQ, Lee JS, Rafique S, Han L, Zorman CA, Zhao HP, Feng PXL, “Free-Standing β-Ga2O3 Thin Diaphragms”, Journal of Electronic Materials 47, 973-981 (2018). DOI: 10.1007/s11664-017-5978-7 [PDF]

51. [JAP] Islam A, Feng PXL, “All-Dry Transferred Single- and Few-Layer MoS2 Field Effect Transistors with Enhanced Performance by Thermal Annealing”, Journal of Applied Physics 123, 025701 (2018). DOI: 10.1063/1.5008846 [PDF]

50. [Nanoscale] Ye F, Lee JS, Feng PXL, “Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators”, Nanoscale 9, 18208-18215 (2017). DOI: 10.1039/C7NR04940D [PDF]

49. [ACS Appl. Mat. & Interfaces] Zheng XQ, Lee JS, Rafique S, Lu H, Zorman CA, Zhao H, Feng PXL, “Ultra-Wide Band-Gap β-Ga2O3 Nanomechanical Resonators with Spatially Visualized Multimode Motion”, ACS Applied Materials & Interfaces 9, 43090-43097 (2017). DOI: 10.1021/acsami.7b13930 [PDF]

48. [JAP] Islam A, Feng PXL, “Effects of Asymmetric Schottky Contacts on Photoresponse in Tungsten Diselenide (WSe2) Phototransistor”, Journal of Applied Physics 122, 085704 (2017). DOI: 10.1063/1.4986122 [PDF]

47. [Nanoscale] Lee JS, Kaul AB, Feng PXL, “Carbon Nanofiber High Frequency Nanomechanical Resonators”, Nanoscale 9, 11864-11870 (2017). DOI: 10.1039/C7NR02306E [PDF]

46. [Nano Lett.] Yang R, Lee JS, Ghosh S, Tang H, Sankaran MR, Zorman CA, Feng PXL, “Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining up to Fracture”, Nano Letters 17, 4568-4575 (2017). DOI: 10.1021/acs.nanolett.7b00730 [PDF]

45. [Microsys. & Nanoeng.] Zheng XQ, Lee JS, Feng PXL, “Hexagonal Boron Nitride (h-BN) Nanomechanical Resonators with Spatially Visualized Motion”, Microsystems & Nanoengineering 3, 17038 (2017). DOI: 10.1038/micronano.2017.38 [PDF]

44. [JMM] Lee JS, Zamani H, Rajgopal S, Zorman CA, Feng PXL, “3C-SiC Microdisk Mechanical Resonators with Multimode Resonances at Radio Frequencies”, Journal of Micromechanics & Microengineering 27, 074001 (2017). DOI: 10.1088/1361-6439/aa6ab7 [PDF]

43. [JVST-B] Rafique S, Lu H, Lee JS, Zheng XQ, Zorman CA, Feng PXL, Zhao H, “Synthesis and Characterization of Ga2O3 Nanosheets on 3C-SiC-on-Si by Low Pressure Chemical Vapor Deposition”, Journal of Vacuum Science & Technology B 35, 011208 (2017). DOI: 10.1116/1.4974158 [PDF]

42. [Semiconductor Science & Technology] Arutt CN, Alles ML, Liao W, Gong H, Davidson JL, Schrimpf RD, Reed RA, Weller RA, Bolotin K, Nicholl R, Pham TT, Zettl A, Du Q, Hu JJ, Li M, Alphenaar BW, Lin J-T, Shurva PD, McNamara S, Walsh KM, Feng PXL, Hutin L, Ernst T, Homeijer BD, Polcawich RG, Proie RM, Jones JL, Glaser ER, Cress CD, Bassiri-Gharb N, “The Study of Radiation Effects in Emerging Micro and Nanoelectromechanical Systems (MEMS and NEMS)”, Semiconductor Science & Technology 32, 013005 (2017). DOI: 10.1088/1361-6641/32/1/013005 [PDF]

41. [Nano Lett.] Wang ZHJia HZheng XQ, Yang R, Ye GJ, Chen XH, Feng PXL, “Resolving and Tuning Mechanical Anisotropy in Black Phosphorus via Nanomechanical Multimode Resonance Spectromicroscopy“, Nano Letters 16, 5394-5400 (2016). DOI: 10.1021/acs.nanolett.6b01598 [PDF]

40. [Small] Fan Y, Lee JS, Hu J, Mao ZQ, Wei J, Feng PXL, “Environmental Instability and Degradation of Single- and Few-Layer WTe2 Nanosheets in Ambient Conditions“, Small 12, 5802-5808 (2016). DOI: 10.1002/smll.201601207 [PDF]

39. [Nature Scientific Reports] Wang ZH, Feng PXL, “Interferometric Motion Detection in Atomic Layer 2D Nanostructures: Visualizing Signal Transduction Efficiency and Optimization Pathways“, Scientific Reports 6, Art. No. 28923 (2016). DOI: 10.1038/srep28923[PDF]

38. [Nanoscale] Jia H, Yang R, Nguyen AE, Alvillar SN, Empante T, Bartels L, Feng PXL, “Large-Scale Arrays of Single- and Few-Layer MoS2 Nanomechanical Resonators, Nanoscale 8, 10677-10685 (2016). DOI: 10.1039/C6NR01118G [PDF]

37. [Nanoscale] Lee JS, Ye F, Wang ZH, Yang R, Hu J, Mao ZQ, Wei J, Feng PXL, “Single- and Few-Layer WTe2 and Their Suspended Nanostructures: Raman Signatures and Nanomechanical Resonators,” Nanoscale 8, 7854-7860 (2016). DOI: 10.1039/C6NR00492J [PDF]

36. [APL] Lee JS, Krupcale MJ, Feng PXL, “Effects of Gamma-Ray Radiation on Two-Dimensional Molybdenum Disulfide (MoS2) Nanomechanical Resonators, Applied Physics Letters 108, 023106 (2016). DOI: 10.1063/1.4939685 [PDF]

35. [Nanoscale] Yang R, Islam A, Feng PXL, “Electromechanical Coupling and Design Considerations of Single-Layer MoS2 Suspended Channel Transistors and Resonators“, Nanoscale7, 19921-19929 (2015). DOI: 10.1039/C5NR06118K [PDF]

34. [PCPS] Ghosh S, Ostrowski E, Yang R, Debnath D, Feng PXL, Zorman CA, Sankaran RM, “Atmospheric-Pressure Plasma Reduction of Metal Cation-Containing Polymer Films to Produce Electrically Conductive Nanocomposites by an Electrodiffusion Mechanism“, Plasma Chemistry & Plasma Processing35, DOI: 10.1007/s11090-015-9665-2 (2015). [PDF]

33. [JMM] Yang R, He T, Tupta MA, Marcoux C, Andreucci P, Duraffourg L, Feng PXL, “Probing Contact-Mode Characteristics of Silicon Nanowire Electromechanical Systems with Embedded Piezoresistive Transducers“, Journal of Micromechanics & Microengineering (JMM)25, 095014 (2015). DOI:10.1088/0960-1317/25/9/095014 [PDF]

  • Cover Article of JMM (September 2015 Issue).

32. [JVST-B] Wang ZH, Islam A, Yang R, Zheng XQ, Feng PXL, “Environmental, Thermal, and Electrical Susceptibility of Black Phosphorus Field Effect Transistors, Journal of Vacuum Science & Technology B 33, 052202 (2015). DOI: 10.1116/1.4927371 [PDF]

  • Cover Article of JVST-B (Sep/Oct 2015 Issue), Editor’s Pick, “Most Read” Article.

31. [IEEE JEDS] He T, Zhang F, Bhunia S, Feng PXL Silicon Carbide (SiC) Nanoelectromechanical Antifuse for Ultralow-Power One-Time-Programmable (OTP) FPGA Interconnects IEEE Journal of Electron Devices Society (JEDS)3, 323-335 (2015). [PDF]

30. [2D Materials] Wang ZH, Feng PXL, “Design of Black Phosphorus 2D Nanomechanical Resonators by Exploiting the Intrinsic Mechanical Anisotropy, 2D Materials 2, 021001 (2015). [PDF]

29. [Diamond & Related Materials] Yang R, Zorman CA, Feng PXL, “High Frequency Torsional-Mode Nanomechanical Resonators Enabled by Very Thin Nanocrystalline Diamond Diaphragms“, Diamond & Related Materials 54, 19-25 (2015). DOI: 10.1016/j.diamond.2014.11.015. [PDF]

28. [Diamond & Related Materials] *Lee JS, *Zheng XQ, Roberts RC, Feng PXL, “Scanning Electron Microscopy Characterization of Structural Features in Suspended and Non-Suspended Graphene by Customized CVD Growth“, Diamond & Related Materials 54, 64-73 (2015). DOI: 10.1016/j.diamond.2014.11.012.  [*Equally-contributed authors].[PDF]

27. [Nanoscale] Wang ZH, Jia H, Zheng XQ, Yang R, Wang ZF, Ye GJ, Chen XH, Shan J, Feng PXL, “Black Phosphorus Nanoelectromechanical Resonators Vibrating at Very High Frequencies, Nanoscale 7, 877-884 (2015). DOI: 10.1039/C4NR04829F [PDF]

26. [Nature Communications] *Wang ZH, *Lee JS, Feng PXL, “Spatial Mapping of Multimode Brownian Motions in High Frequency Silicon Carbide (SiC) Microdisk Resonators, Nature Communications 5, 5158 (2014). [*Equally-contributed authors]. [PDF]

25. [JVST-B] *Yang R, *Zheng XQ, Wang ZH, Miller CJ, Feng PXL, “Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing, Journal of Vacuum Science & Technology B 32, 061203 (2014). [*Equally-contributed authors]. [PDF]

24. [Nanoscale] Yang R, Wang ZH, Feng PXL, “Electrical Breakdown of Multilayer MoS2 Field-Effect Transistors with Thickness-Dependent Mobility”, Nanoscale 6, 12383-12390 (2014).[PDF]

23. [APL]Lee JS, Wang ZH, He KL, Shan J, Feng PXL, “Air Damping of Atomically Thin MoS2 Nanomechanical Resonators, Applied Physics Letters 105, 023104 (2014). [PDF]

22. [APL] Lu XY, Lee JY, Feng PXL, Lin Q, “High Q Silicon Carbide Microdisk Resonator“, Applied Physics Letters 104, 181103 (2014). [PDF]

21. [APL] Wang ZH, Feng PXL, “Dynamic Range of Atomically Thin Vibrating Nanomechanical Resonators“, Applied Physics Letters 104, 103109 (2014). [PDF]

20. [APL] Yang R, Wang ZH, Lee JS, Ladhane K, Young DJ, Feng PXL, “6H-SiC Microdisk Torsional Resonators in a “Smart-Cut” Technology“, Applied Physics Letters 104, 091906 (2014). [PDF]

19. [ACS Appl. Mat. & Interfaces] Ghosh S, Yang R, Kaumeyer M, Zorman CA, Rowan SJ, Feng PXL, Sankaran RM, “Fabrication of Electrically-Conductive Metal Patterns at the Surface of Polymer Films by Microplasma-based Direct Writing“, ACS Applied Materials & Interfaces 6, 3099-3104 (2014).  DOI: 10.1021/am406005a. [PDF]

18. [Nature Scientific Reports] Wang ZH, Lee JS, He KL, Shan J, Feng PXL, “Embracing Structural Nonidealities and Asymmetries in Two-Dimensional Nanomechanical Resonators“, Scientific Reports 4, Art. No. 3919 (2014). [PDF]

17. [Nature Nanotechnology] Feng PXL, “Tuning in to a Graphene Oscillator“, Nature Nanotechnology 8, 897-898 (2013).  [News & Views Article, Invited by the Editor]. [PDF]

16. [Nanotechnology] Koumela A, Hentz S, Mercier D, Dupre C, Ollier E, Feng PXL, Purcell ST, Duraffourg L, “High Frequency Top-Down Junction-less Silicon Nanowire Resonators“, Nanotechnology 24, 435203 (2013). [PDF]

15. [ACS Nano] *Lee JS, *Wang ZH, He KL, Shan J, Feng PXL, “High Frequency MoS2 Nanomechanical Resonators“, ACS Nano 7, 6086-6091, DOI: 10.1021/nn4018872 (2013). [*Equally-contributed authors]. [PDF]

14. [Nature Communications] Falk AL, Buckley BB, Calusine G, Koehl WF, Dobrovitski V, Politi A, Zorman CA, Feng PXL, Awschalom DD, “Polytype Control of Spin Qubits in Silicon Carbide“, Nature Communications 4, 1819, DOI: 10.1038/ncomms2854 (2013). [PDF]

13. [Opt. Lett.] Lu XY, Lee JY, Feng PXL, Lin Q, “Silicon Carbide Microdisk Resonator“, Optics Letters 38, 1304-1306 (2013). [PDF]

12. [JVST-B] Lee SW, Zamani H, Feng PXL, Sankaran RM, “Extraction of a Low-Current Discharge from a Microplasma for Nanoscale Patterning Applications at Atmospheric Pressure“, Journal of Vacuum Science & Technology B 30, 010603 (2012). [PDF]

10. [Nano Lett.] *Yang YT, *Callegari C, *Feng XL, Roukes ML, “Surface Adsorbate Fluctuations and Noise in Nanoelectromechanial Systems“, Nano Letters 11, 1753-1759 (2011).  [*Equally-contributed authors].  [Supporting Information]  [PDF]

9. [Nano Lett.] Feng XL, Matheny MH, Zorman CA, Mehregany M, Roukes ML, “Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires“, Nano Letters 10, 2891-2896 (2010).  [PDF]

8. [APL] Karabalin RK, Matheny MH, Feng XL, Defay E, Le Rhun G, Marcoux C, Hentz S, Andreucci P, Roukes ML, “Piezoelectric Nanoelectromechanical Resonators Based on Aluminum Nitride (AlN) Thin Films“, Applied Physics Letters 95, 103111 (2009).  [PDF]

7. [Nano Lett.] Karabalin RK, Feng XL, Roukes ML, “Parametric Nanomechanical Amplificationat Very High Frequency“, Nano Letters 9, 3116-3123 (2009).  [PDF]

  • Scientific American, Special Edition on Nanotechnology – “The Rise of Nanotech“, vol. 17, no. 3, 2007 – Featuring one of the parametric NEMS nanodevices I made in the cleanroom at Caltech.

6. [Nature Nanotechnology] Naik AK, Hanay MS, Hiebert WK, Feng XL, Roukes ML, “Towards Single-Molecule Nanomechanical Mass Spectrometry“, Nature Nanotechnology 4, 445-450 (2009).  [PDF]

5. [Nano Lett.] *He R, *Feng XL, Roukes ML, Yang P, “Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature“, Nano Letters 8, 1756-1761 (2008). [*Equally-contributed authors].  [PDF]

4. [Nature Nanotechnology] Feng XL, White CJ, Hajimiri A, Roukes ML, “A Self-Sustaining Ultrahigh-Frequency Nanoelectromechanical Oscillator“, Nature Nanotechnology 3, 342-346 (2008).  [PDF]

3. [Nano Lett.] Feng XL, He R, Yang P, Roukes ML, “Very High Frequency Silicon Nanowire Electromechanical Resonators“, Nano Letters 7, 1953-1959 (2007).  [PDF]

2. [Nano Lett.] Yang YT, Callegari C, Feng XL, Ekinci KL, Roukes ML, “Zeptogram-Scale Nanomechanical Mass Sensing“, Nano Letters 6, 583-586 (2006).  [PDF]

  1. [New J. Phys.] [Invited] Huang XMH, Feng XL, Zorman CA, Mehregany M, Roukes ML, “VHF, UHF and Microwave Frequency Nanomechanical Resonators“, New Journal of Physics 7, Art. No. 247 (2005).  [PDF]