{"id":11,"date":"2015-11-03T15:53:38","date_gmt":"2015-11-03T20:53:38","guid":{"rendered":"https:\/\/test.eng.ufl.edu\/faculty-site\/?page_id=11"},"modified":"2025-12-18T11:13:11","modified_gmt":"2025-12-18T16:13:11","slug":"publications","status":"publish","type":"page","link":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/publications\/","title":{"rendered":"Publications"},"content":{"rendered":"

Google Scholar\u00a0page<\/a><\/h3>\n

ORCID ID: 0000-0001-6971-2063<\/a><\/h3>\n

ResearcherID: L-5252-2014<\/a>\u00a0<\/h3>\n

 <\/p>\n

Journal Publications<\/h2>\n
    \n
  1. J. Hicks, J. Li, C. Ying, and Ant Ural<\/strong>, “Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks,” Journal of Applied Physics<\/em> 123<\/strong>, 204309 (2018). [link]<\/a>\u00a0 (highlighted in AIP Scilight<\/em> and selected as a Featured Article<\/em>)<\/strong><\/a>\u00a0<\/li>\n
  2. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural<\/strong>, “Characterization of graphene gate electrodes for metal-oxide-semiconductor devices,” \u00a0MRS Advances<\/em> 2<\/strong>, 103 (2017).\u00a0[link]<\/a><\/li>\n
  3. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural<\/strong>, “Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes,”\u00a0Applied Physics Letters\u00a0<\/em>109<\/strong>, 223104 (2016). [link]<\/a><\/li>\n
  4. Y. An, A. Behnam, E. Pop, G. Bosman, and Ant Ural<\/strong>, \u201c<\/span>Forward-bias diode parameters, electronic noise, and photoresponse of graphene\/silicon Schottky junctions with an interfacial native oxide layer,\u201d <\/span>J<\/span>ournal of Applied Physics <\/em>118<\/strong>, 114307 (2015).\u00a0[link]<\/a><\/li>\n
  5. Y. An, A. Behnam, E. Pop, and Ant Ural<\/strong>, \u201cMetal-semiconductor-metal photodetectors based on graphene\/p<\/em>-type silicon Schottky junctions,\u201d Applied Physics Letters<\/em> 102<\/strong>, 013110 (2013).\u00a0[link]<\/a><\/li>\n
  6. V. A. Sydoruk, M. V. Petrychuk, Ant Ural<\/strong>, G. Bosman, A. Offenhausser, S. A. Vitusevich, \u201cNoise spectroscopy of transport properties in carbon nanotube field-effect transistors,\u201d Carbon<\/em> 53<\/strong>, 252 (2013).\u00a0[link]<\/a>\u00a0<\/li>\n
  7. Y. An, H. Rao, G. Bosman and Ant Ural<\/strong>, “Random telegraph signal and 1\/f<\/em> noise in forward-biased single-walled carbon nanotube film-Silicon Schottky junctions,” Applied Physics Letters<\/em> 100<\/strong>, 213102 (2012).\u00a0[link]<\/a>\u00a0<\/li>\n
  8. Y. An, H. Rao, G. Bosman, and Ant Ural<\/strong>, \u201cCharacterization of carbon nanotube film-silicon Schottky barrier photodetectors,\u201d Journal of Vacuum Science and Technology B<\/em> 30<\/strong>, 021805 (2012).\u00a0[link]<\/a>\u00a0<\/li>\n
  9. Y. Choi, M. Michan, J. L. Johnson, A. Naieni, Ant Ural<\/strong>, and A. Nojeh, “Field-emission properties of individual GaN nanowires grown by chemical vapor deposition,” Journal of Applied Physics<\/em> 111<\/strong>, 044308 (2012).\u00a0[link]<\/a>\u00a0<\/li>\n
  10. Y. Zhou, J. L. Johnson, Ant Ural<\/strong>, and H. Xie, “Localized growth of carbon nanotubes on CMOS substrate at room temperature using maskless post-CMOS processing,” IEEE Transactions on Nanotechnology<\/em> 11<\/strong>, 16 (2012).\u00a0[link]<\/a>\u00a0<\/li>\n
  11. J. L. Johnson, A. Behnam, Y. An, S. J. Pearton, and Ant Ural<\/strong>, \u201cExperimental study of graphitic nanoribbon films for ammonia sensing,\u201d Journal of Applied Physics <\/em>109<\/strong>, 124301 (2011).\u00a0[link]<\/a>\u00a0<\/li>\n
  12. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural<\/strong>, \u201cElectronic transport in graphitic nanoribbon films,\u201d ACS<\/em> Nano<\/em> 5<\/strong>, 1617 (2011).\u00a0[link]<\/a>\u00a0<\/li>\n
  13. A. Behnam, N. Arkali Radhakrishna, Z. Wu, and Ant Ural<\/strong>, \u201cElectronic properties of metal-semiconductor and metal-oxide-semiconductor structures composed of carbon nanotube film on silicon,\u201d Applied Physics Letters<\/em> 97<\/strong>, 233105 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  14. A. Behnam, A. Biswas, G. Bosman, and Ant Ural<\/strong>, \u201cTemperature-dependent transport and 1\/f <\/em>noise mechanisms in single-walled carbon nanotube films,\u201d Physical Review B<\/em> 81<\/strong>, 125407 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  15. J. L. Johnson, A. Behnam, S. J. Pearton, and Ant Ural<\/strong>, “Hydrogen sensing using Pd-functionalized multi-layer graphene nanoribbon networks,” Advanced Materials<\/em> 22<\/strong>, 4877 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  16. V. K. Sangwan, A. Behnam, V. W. Ballarotto, M. S. Fuhrer, Ant Ural<\/strong>, and E. D. Williams, “Optimizing transistor performance of percolating carbon nanotube networks,” Applied Physics Letters<\/em> 97<\/strong>, 043111 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  17. J. S. Wright, W. Lim, D. P. Norton, S. J. Pearton, F. Ren, J. L. Johnson, and Ant Ural<\/strong>, \u201cNitride and oxide semiconductor nanostructured hydrogen gas sensors,\u201d Semiconductor Science and Technology <\/em>25<\/strong>, 024002 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  18. S. A. Vitusevich, V. A. Sydoruk, M. V. Petrychuk, B. A. Danilchenko, N. Klein, A. Offenh\u00e4usser, Ant Ural<\/strong>, and G. Bosman, \u201cTransport properties of single-walled carbon nanotube transistors after gamma radiation treatment,\u201d Journal of Applied Physics<\/em> 107<\/strong>, 063701 (2010).\u00a0[link]<\/a>\u00a0<\/li>\n
  19. J. Hicks, A. Behnam, and Ant Ural<\/strong>, \u201cA computational study of tunneling-percolation electrical transport in graphene-based nanocomposites,\u201d Applied Physics Letters<\/em> 95<\/strong>, 213103 (2009).\u00a0[link]<\/a>\u00a0]<\/a><\/li>\n
  20. J. Hicks, A. Behnam, and Ant Ural<\/strong>, \u201cResistivity in percolation networks of one dimensional elements with a length distribution,\u201d Physical Review E<\/em> 79<\/strong>, 012102 (2009).\u00a0[link]<\/a><\/li>\n
  21. Ant Ural<\/strong>, \u201cElectronic properties of carbon nanotube percolation films and nanotube film-semiconductor junctions,\u201d ECS Transactions<\/em> 19<\/strong>, 43 (2009). [link]<\/a>\u00a0<\/li>\n
  22. Y. Choi, J. L. Johnson, and Ant Ural<\/strong>, \u201cPatterned growth of silicon oxide nanowires from iron ion implanted SiO2<\/sub> substrates,\u201d Nanotechnology<\/em> 20<\/strong>, 135307 (2009). (cover feature)<\/a>\u00a0<\/strong>[link]<\/a>\u00a0<\/li>\n
  23. J. S. Wright, W. Lim, B. P. Gila, S. J. Pearton, J. L. Johnson, Ant Ural<\/strong>, and F. Ren, \u201cHydrogen sensing with Pt-functionalized GaN nanowires,\u201d Sensors and Actuators B: Chemical<\/em> 140<\/strong>, 196 (2009).\u00a0[link]<\/a>\u00a0<\/li>\n
  24. J. L. Johnson, Y. Choi, Ant Ural<\/strong>, W. Lim, J. S. Wright, B. P. Gila, F. Ren, and S. J. Pearton, \u201cGrowth and characterization of GaN nanowires for hydrogen sensors,\u201d Journal of Electronic Materials <\/em>38<\/strong>, 490 (2009).\u00a0[link]<\/a>\u00a0<\/li>\n
  25. A. Behnam, G. Bosman, and Ant Ural<\/strong>, \u201cPercolation scaling of 1\/f<\/em> noise in single-walled carbon nanotube films,\u201d Physical Review B<\/em> 78, <\/strong>085431 (2008).\u00a0[link]<\/a>\u00a0<\/li>\n
  26. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, A. K. Okyay, P. Kapur, K. C. Saraswat, and Ant Ural<\/strong>, \u201cExperimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures,\u201d Applied Physics Letters<\/em> 92<\/strong>, 243116 (2008).\u00a0[link]<\/a>\u00a0<\/li>\n
  27. W. Lim, J. S. Wright, B. P. Gila, J. L. Johnson, Ant Ural<\/strong>, T. Anderson, F. Ren, and S. J. Pearton, \u201cRoom temperature hydrogen detection using Pd-coated GaN nanowires,\u201d Applied Physics Letters<\/em> 93<\/strong>, 072109 (2008).\u00a0[link]<\/a>\u00a0<\/li>\n
  28. A. Behnam, J. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural<\/strong>, \u201cMetal-semiconductor-metal photodetectors based on single-walled carbon nanotube film\u2013GaAs Schottky contacts,\u201d Journal of Applied Physics<\/em> 103<\/strong>, 114315 (2008).\u00a0[link]<\/a>\u00a0<\/li>\n
  29. J. L. Johnson, Y. Choi, and Ant Ural<\/strong>, \u201cGaN nanowire and Ga2<\/sub>O3<\/sub> nanowire and nanoribbon growth from ion implanted iron catalyst,\u201d Journal of Vacuum Science and Technology B <\/em>26<\/strong>, 1841 (2008).\u00a0[link]<\/a>\u00a0<\/li>\n
  30. A. Behnam, J. Guo, and Ant Ural, <\/strong>\u201cEffects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films,\u201d Journal of Applied Physics<\/em> 102<\/strong>, 044313 (2007).\u00a0[link]<\/a>\u00a0<\/li>\n
  31. A. Behnam and Ant Ural<\/strong>, \u201cComputational study of geometry-dependent resistivity scaling in single-walled carbon nanotube films,\u201d Physical Review B<\/em> 75, <\/strong>125432 (2007).\u00a0[link]<\/a>\u00a0<\/li>\n
  32. A. Behnam, Y. Choi, L. Noriega, Z. Wu, I. Kravchenko, A. G. Rinzler, and Ant Ural<\/strong>, \u201cNanolithographic patterning of transparent, conductive single-walled carbon nanotube films by inductively coupled plasma reactive ion etching,\u201d <\/strong>Journal of Vacuum Science and Technology B<\/em> 25<\/strong>, 348 (2007). [link]<\/a><\/li>\n
  33. Y. Choi, J. Sippel-Oakley, and Ant Ural<\/strong>, \u201cSingle-walled carbon nanotube growth from ion implanted Fe catalyst,\u201d Applied Physics Letters<\/em> 89<\/strong>, 153130 (2006). [link]<\/a>\u00a0<\/li>\n
  34. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and Ant Ural<\/strong>, \u201cMicromachined silicon transmission electron microscopy grids for direct characterization of as-grown nanotubes,\u201d Nanotechnology<\/em> 17<\/strong>, 4635 (2006). [link]<\/a>\u00a0<\/li>\n
  35. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and Ant Ural<\/strong>, \u201cResistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions,\u201d Applied Physics Letters<\/em> 89<\/strong>, 093107 (2006). [link]<\/a>\u00a0<\/li>\n
  36. A. Nojeh, Ant Ural<\/strong>, R. F. Pease, and H. Dai, “Electric-field-directed growth of carbon nanotubes in two dimensions,” Journal of Vacuum Science & Technology B <\/em>22<\/strong>, 3421 (2004). [link]<\/a>\u00a0<\/li>\n
  37. Y. Li, D. Mann, M. Rolandi, W. Kim, Ant Ural<\/strong>, S. Hung, A. Javey, J. Cao, D. Wang, E. Yenilmez, Q. Wang, J. F. Gibbons, Y. Nishi, and H. Dai, \u201cPreferential growth of semiconducting single-walled carbon nanotubes by a plasma enhanced CVD method,\u201d Nano Letters<\/em> 4<\/strong>, 317 (2004). [link]<\/a>\u00a0<\/li>\n
  38. Ant Ural<\/strong>, Y. Li, and H. Dai, \u201cElectric-field-aligned growth of single-walled carbon nanotubes on surfaces,\u201d Applied Physics Letters<\/em> 81<\/strong>, 3464 (2002). [link]<\/a>\u00a0<\/li>\n
  39. A. Javey, H. Kim, M. Brink, Q. Wang, Ant Ural<\/strong>, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, \u201cHigh k dielectrics for advanced carbon nanotube transistors and logic,\u201d Nature Materials<\/em> 1<\/strong>, 241 (2002). [link]<\/a>\u00a0<\/li>\n
  40. A. Javey, Q. Wang, Ant Ural<\/strong>, Y. Li, and H. Dai, \u201cCarbon nanotube transistor arrays for multistage complementary logic and ring oscillators,\u201d Nano Letters<\/em> 2<\/strong>, 929 (2002). [link]<\/a>\u00a0<\/li>\n
  41. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cAtomic-scale diffusion mechanisms via interme\u00addiate species,\u201d Physical Review B<\/em> 65<\/strong>, 134303 (2002). [link]<\/a>\u00a0<\/li>\n
  42. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cSilicon self-diffusion under extrinsic conditions,\u201d Applied Physics Letters<\/em> 79<\/strong>, 4328 (2001). [link]<\/a>\u00a0<\/li>\n
  43. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cUral, Griffin, and Plummer reply,\u201d Physical Review Letters<\/em> 85<\/strong>, 4836 (2000). [link]<\/a>\u00a0<\/li>\n
  44. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cSelf-diffusion in silicon: Similarity between the properties of native point defects,\u201d Physical Review Letters<\/em> 83<\/strong>, 3454 (1999). [link]<\/a>\u00a0<\/li>\n
  45. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cFractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon,\u201d Journal of Applied Physics<\/em> 85<\/strong>, 6440 (1999). [link]<\/a><\/li>\n
  46. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cNonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,\u201d Physica B<\/em> 273<\/strong>, 512 (1999). [link]<\/a>\u00a0<\/li>\n
  47. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cExperimental evidence for a dual vacancy-inter\u00adstitial mechanism of self-diffusion in silicon,\u201d Applied Physics Letters<\/em> 73<\/strong>, 1706 (1998). [link]<\/a><\/li>\n<\/ol>\n

    Conference Publications<\/h2>\n
      \n
    1. J. Li, J. Hicks, T.-Y. Tsai, S. Mishra, and Ant Ural<\/strong>, \u201cRole of wire-to-wire junction resistance in percolation resistivity of transparent, conductive metal nanowire networks,\u201d presented at the Materials Research Society (MRS) Fall Meeting<\/em>, Boston, MA, USA (2018).<\/li>\n
    2. S. Mishra, J. Li, T.-Y. Tsai, J. Hicks, and Ant Ural<\/strong>, \u201cMonte Carlo simulation of percolation transport in transparent, conductive metal nanowire networks,\u201d presented at NanoFlorida 2018<\/em>, Melbourne, FL, USA (2018).<\/li>\n
    3. Ant Ural<\/strong>, \u201cGraphene\/Insulator\/Silicon MOS capacitors: Fowler-Nordheim tunneling and quantum capacitance,\u201d presented at Graphene 2018<\/em>, Dresden, Germany (2018).<\/li>\n
    4. J. Li, C. Ying, J. Hicks, and Ant Ural<\/strong>, \u201cEffect of nanowire curviness on the resistivity scaling in one-dimensional metal nanowire networks for transparent conductors,\u201d presented at the Materials Research Society (MRS) Fall Meeting<\/em>, Boston, MA, USA (2017).<\/li>\n
    5. R. Lian, Y. An, and Ant Ural<\/strong>, \u201cEffect of graphene quantum capacitance in the presence of charged impurities on the C<\/em>–V<\/em> characteristics of graphene gate MOS devices,\u201d presented at the Materials Research Society (MRS) Fall Meeting<\/em>, Boston, MA, USA (2017).<\/li>\n
    6. J. Li, C. Ying, J. Hicks, and Ant Ural<\/strong>, \u201cPercolation resistivity in nanostructured transparent conductor networks consisting of curvy nanowires,\u201d presented at the AVS 64th<\/sup> Symposium and Exhibition<\/em>, Tampa, FL, USA (2017).<\/em><\/li>\n
    7. R. Lian and Ant Ural<\/strong>, \u201cCapacitance-voltage characteristics of graphene-gate MOS devices: The effect of graphene quantum capacitance,\u201d presented at the AVS 64th<\/sup> Symposium and Exhibition<\/em>, Tampa, FL, USA (2017).<\/li>\n
    8. Ant Ural<\/strong>, \u201cGraphene\/Silicon mixed-dimensional van der Waals junctions,\u201d presented at NanoFlorida 2017<\/em>, Miami, FL, USA (2017). (keynote talk)<\/strong>.<\/li>\n
    9. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural<\/strong>, “Metal-oxide-semiconductor (MOS) devices with graphene gate electrodes,” presented at\u00a0the Materials Research Society (MRS) Fall\u00a0Meeting<\/em>, Boston, CA, USA (2016).<\/li>\n
    10. Y. An, A. Shekhawat, A. Behnam, E. Pop, and Ant Ural<\/strong>, \u201cMetal-oxide-semiconductor capacitors based on graphene and p<\/em>-type silicon,\u201d presented at NanoFlorida 2016<\/em>, Orlando, FL, USA (2016).<\/li>\n
    11. Y. An, A. Behnam, G. Bosman, E. Pop, and Ant Ural<\/strong>, \u201cFabrication and characterization of photodetectors composed of graphene\/silicon Schottky junctions,\u201d presented at the 225th<\/sup> Electrochemical Society (ECS) Meeting<\/em>, Orlando, FL, USA (2014).<\/li>\n
    12. Y. An, A. Behnam, E. Pop, and Ant Ural<\/strong>, \u201cGraphene\/p-type silicon metal-semiconductor-metal photodetectors,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2013).<\/li>\n
    13. Y. An, H. Rao, G. Bosman, and Ant Ural<\/strong>, \u201cElectronic noise in carbon nanotube film-silicon Schottky junction devices,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2012).<\/li>\n
    14. V. Sydoruk, M. Petrychuk, Ant Ural<\/strong>, G. Bosman, A. Offenh\u00e4usser, and S. A. Vitusevich, \u201cTransition from Schottky barrier determined to low-noise channel transport regime in carbon nanotube field effect transistors,\u201d presented at the 31st International Conference on the Physics of Semiconductors (ICPS 2012)<\/em>, Zurich, Switzerland (2012).<\/li>\n
    15. Y. An, J. L. Johnson, A. Behnam, S. J. Pearton, and Ant Ural<\/strong>, \u201cSensing gas molecules using graphitic nanoribbon films and networks,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, Dallas, TX, USA (2011).<\/li>\n
    16. V. A. Sydoruk, M. V. Petrychuk, A. Offenh\u00e4usser, Ant Ural<\/strong>, G. Bosman, and S. A. Vitusevich, \u201cNoise characterization of transport properties in single carbon nanotube field-effect transistors,\u201d presented at the 21st International Conference on Noise and Fluctuations (ICNF 2011)<\/em>, Toronto, Canada (2011).<\/li>\n
    17. A. Behnam, N. Arkali Radhakrishna, and Ant Ural<\/strong>, \u201cCharacterization of the metal-semiconductor and metal-insulator-semiconductor junctions between single-walled carbon nanotube films and Si substrates,\u201d presented at the 2010 Device Research Conference (DRC)<\/em>, South Bend, IN, USA (2010); 2010 Device Research Conference (DRC) Digest<\/em>, 141 (2010).<\/li>\n
    18. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural<\/strong>, \u201cLow temperature transport in networks based on multi-layer graphene nanoribbons,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, Portland, OR, USA (2010).<\/li>\n
    19. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural<\/strong>, \u201cCharacterization of the junction between single-walled carbon nanotube films and silicon substrates,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, Portland, OR, USA (2010).<\/li>\n
    20. A. Behnam, J. L. Johnson, Y. An, A. Biswas, and Ant Ural<\/strong>, \u201cNetworks based on graphene nanoribbons: Structure and electronic transport,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2010).<\/li>\n
    21. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural<\/strong>, \u201cSingle-walled carbon nanotube film-silicon junctions,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2010).<\/li>\n
    22. J. L. Johnson, A. Behnam, and Ant Ural<\/strong>, \u201cElectrical and materials characterization of large area, transparent, conductive graphene film networks and their potential for gas sensing,\u201d presented at the Materials Research Society (MRS) Fall Meeting 2009<\/em>, Boston, MA, USA (2009).<\/li>\n
    23. Y. Choi, J. M. Michan, J. L. Johnson, A. K. Naeini, Ant Ural<\/strong>, and A. Nojeh, \u201cField-emission properties of individual GaN nanowires grown by the vapour-liquid-solid method,\u201d presented at the 14th<\/sup> Annual Meeting of the <\/em>Pacific Centre for Advanced Materials and Microstructures<\/em> (PCAMM)<\/em>, Burnaby, British Columbia, Canada (2009).<\/li>\n
    24. J. L. Johnson, A. Behnam, J. S. Wright, S. J. Pearton, and Ant Ural<\/strong>, \u201cLarge area, transparent, conductive graphene nanoribbon network gas sensors,\u201d presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009)<\/em>, Fort Lauderdale, FL, USA (2009).<\/li>\n
    25. N. Arkali Radhakrishna, A. Behnam, J. L. Johnson, and Ant Ural<\/strong>, \u201cElectrical characterization of the nanoscale interface between single-walled carbon nanotube films and silicon substrates,\u201d presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009)<\/em>, Fort Lauderdale, FL, USA (2009).<\/li>\n
    26. Y. Zhou, J. Johnson, Ant Ural<\/strong>, and H. Xie “Carbon nanotube-CMOS integration based on a maskless post-CMOS process,\u201d presented at the Nanoelectronic Devices for Defense and Security Conference (NANO-DDS 2009)<\/em>, Fort Lauderdale, FL, USA (2009).<\/li>\n
    27. Ant Ural<\/strong>, \u201cElectronic properties of carbon nanotube films and nanotube film-semiconductor junctions,\u201d presented at the 215th<\/sup> Electrochemical Society (ECS) Meeting<\/em>, San Francisco, CA, USA (2009). (invited talk)<\/strong>; Electrochemical Society (ECS) Transactions<\/em> 19<\/strong>, 43 (2009).<\/li>\n
    28. A. Behnam, G. Bosman, and Ant Ural<\/strong>, \u201cCharacterization and modeling of low frequency noise in single-walled carbon nanotube film-based devices,\u201d presented at the 2009 Device Research Conference (DRC)<\/em>, University Park, PA, USA (2009); 2009 Device Research Conference (DRC) Digest<\/em>, 25 (2009).<\/li>\n
    29. A. Behnam, G. Bosman, and Ant Ural<\/strong>, \u201c1\/f<\/em> noise in single-walled carbon nanotube films,\u201d presented at SPIE<\/em> Photonics West 2009<\/em>, San Jose, CA, USA (2009); Proceedings of the SPIE \u2013 The International Society for Optical Engineering <\/em>7204<\/strong>, 72040J (2009).<\/li>\n
    30. A. Behnam, Ant Ural<\/strong>, and G. Bosman, \u201cModeling and measurements of low frequency noise in single-walled carbon nanotube films with bulk and percolation configurations,\u201d presented at the 20th International Conference on Noise and Fluctuations (ICNF 2009)<\/em>, Pisa, Italy (2009). (invited talk)<\/strong>; AIP Conference Proceedings<\/em> 1129<\/strong>, 79 (2009).<\/li>\n
    31. E. Cicek, J. L. Johnson, Ant Ural<\/strong>, and G. Bosman, \u201cDefect noise spectroscopy results for GaN nanowires,\u201d presented at the 20th International Conference on Noise and Fluctuations (ICNF 2009)<\/em>, Pisa, Italy (2009); AIP Conference Proceedings<\/em> 1129<\/strong>, 101 (2009).<\/li>\n
    32. J. L. Johnson, Y. Choi, and Ant Ural<\/strong>, \u201cIon implanted SiO2<\/sub> substrates for nucleating silicon oxide nanowire growth,\u201d presented at the Materials Research Society (MRS) Spring Meeting 2009, <\/em>San Francisco, CA, USA (2009); Materials Research Society Symposium Proceedings<\/em> 1181<\/strong>, 1181-DD07-03 (2009).<\/li>\n
    33. J. Hicks, A. Behnam, and Ant Ural<\/strong>, \u201cA computational study of electrical transport in graphene-based films and composites,\u201d presented at the American Physical Society (APS) March Meeting<\/em> 2009<\/em>, Pittsburgh, PA, USA (2009).<\/li>\n
    34. A. Behnam, G. Bosman, and Ant Ural<\/strong>, \u201cExperimental and computational study of 1\/f<\/em> noise scaling in single-walled carbon nanotube percolation films,\u201d presented at the American Physical Society (APS) March Meeting<\/em> 2009<\/em>, Pittsburgh, PA, USA (2009).<\/li>\n
    35. W. Lim, J. Wright, B. P. Gila, J. L. Johnson, Ant Ural<\/strong>, T. Anderson, F. Ren, and S. J. Pearton, \u201cRoom temperature hydrogen detection using Pd-coated GaN nanowires,\u201d presented at the Materials Research Society (MRS) Fall Meeting<\/em>, Boston, MA, USA (2008).<\/li>\n
    36. Y. Zhou, J. Johnson, L. Wu, S. Maley, Ant Ural<\/strong>, and H. Xie, \u201cDesign and fabrication of microheaters for localized carbon nanotube growth,\u201d presented at the 8th International Conference on Nanotechnology (IEEE Nano 2008)<\/em>, Arlington, TX, USA (2008); Proceedings of the 8th IEEE Conference on Nanotechnology (NANO)<\/em>, 452 (2008).<\/li>\n
    37. Y. Choi, J. L. Johnson, and Ant Ural<\/strong>, \u201cGaN and Ga2<\/sub>O3<\/sub> nanowire and nanoribbon growth from ion implanted Fe catalyst,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2008).<\/li>\n
    38. A. Behnam,<\/u> J. L. Johnson, Y. Choi, L. Noriega, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural<\/strong>, \u201cMetal-Semiconductor-Metal (MSM) photodetectors with single-walled carbon nanotube film Schottky electrodes on GaAs,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, New Orleans, LA, USA (2008).<\/li>\n
    39. J. Hicks, A. Behnam, and Ant Ural<\/strong>, \u201cMonte Carlo simulations of the effect of nanotube length distribution on the percolation resistivity in single-walled carbon nanotube films,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, New Orleans, LA, USA (2008).<\/li>\n
    40. A. Behnam, J. L. Johnson, Y. Choi, M. G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural<\/strong>, \u201cMetal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-Silicon Schottky contacts,\u201d presented at SPIE<\/em> Photonics West 2008<\/em>, San Jose, CA, USA (2008); Proceedings of the SPIE \u2013 The International Society for Optical Engineering <\/em> 6885<\/strong>, 68850A\u00a0(2008).<\/li>\n
    41. J. Johnson, A. Behnam, Y. Choi, L. Noriega, G. Ertosun, Z. Wu, A. G. Rinzler, P. Kapur, K. C. Saraswat, and Ant Ural<\/strong>, “Metal-Semiconductor-Metal (MSM) photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts,\u201d presented at the Materials Research Society (MRS) Fall Meeting<\/em>, Boston, MA, USA (2007); Materials Research Society Symposium Proceedings<\/em> 1057<\/strong>, 1057-II22-05 (2007).<\/li>\n
    42. Ant Ural<\/strong>, A. Behnam, J. Johnson, and Y. Choi, \u201cPercolation transport in single-walled carbon nanotube films: Experiment and Simulation,\u201d presented at SPIE Optics East 2007<\/em>, Boston, MA, USA (2007). (invited talk)<\/strong>; Proceedings of the SPIE \u2013 The International Society for Optical Engineering <\/em>6769<\/strong>, 67690B\u00a0(2007).<\/li>\n
    43. A. Behnam and Ant Ural<\/strong>, \u201cElectrical characterization and modeling of geometry-dependent resistivity scaling in single-walled carbon nanotube films,\u201d presented at the Materials Research Society (MRS) Spring Meeting, <\/em>San Francisco, CA, USA (2007).<\/li>\n
    44. A. Behnam and Ant Ural<\/strong>, \u201cGeometry-dependent resistivity scaling in single-walled carbon nanotube films,\u201d presented at the American Physical Society (APS) March Meeting<\/em>, Denver, CO, USA (2007).<\/li>\n
    45. Y. Choi and Ant Ural<\/strong>, \u201cMicromachined silicon grids for direct TEM and Raman characterization of CVD grown carbon nanotubes,\u201d presented at SPIE<\/em> Photonics West 2007<\/em>, San Jose, CA, USA (2007); Proceedings of the SPIE \u2013 The International Society for Optical Engineering <\/em>6464<\/strong>, 64640A\u00a0(2007).<\/li>\n
    46. Y. Choi, J. Johnson, R. Moreau, E. Perozziello, and Ant Ural<\/strong>, \u201cMicromachined silicon grids for direct TEM characterization of carbon nanotubes grown by CVD,\u201d presented at the Materials Research Society (MRS) Fall Meeting, <\/em>Boston, MA, USA (2006); Materials Research Society Symposium Proceedings<\/em> 963<\/strong>, 0963-Q20-13 (2006).<\/li>\n
    47. A. Behnam, L. Noriega, Y. Choi, Z. Wu, A. G. Rinzler, and Ant Ural<\/strong>, \u201cGeometry dependent resistivity in single-walled carbon nanotube films patterned down to submicron dimensions,\u201d presented at the Materials Research Society (MRS) Fall Meeting, <\/em>Boston, MA, USA (2006); Materials Research Society Symposium Proceedings<\/em> 963<\/strong>, 0963-Q10-55 (2006).<\/li>\n
    48. Ant Ural<\/strong>, \u201cElectrical properties of single-walled nanotube films,\u201d presented at SPIE Optics East 2006<\/em>, Boston, MA, USA (2006). (invited talk)<\/strong>; Proceedings of the SPIE \u2013 The International Society for Optical Engineering <\/em>6370<\/strong>, 63700F (2006).<\/li>\n
    49. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and Ant Ural, \u201c<\/strong>Carbon nanotube growth from nanoscale clusters formed by ion implantation,\u201d presented at the Materials Research Society (MRS) Fall Meeting, <\/em>Boston, MA, USA (2005); Materials Research Society Symposium Proceedings<\/em> 908<\/strong>, 0908-OO15-03 (2005).<\/li>\n
    50. Y. Choi, J. Sippel-Oakley, A. G. Rinzler, and Ant Ural, \u201c<\/strong>Carbon nanotube growth from ion-implanted catalyst by chemical vapor deposition,\u201d presented at SPIE Optics East 2005<\/em>, Boston, MA, USA (2005); Proceedings of the SPIE \u2013 The International Society for Optical Engineering<\/em> 6008<\/strong>, 600805 (2005).<\/li>\n
    51. Ant Ural<\/strong>, \u201cElectric field assisted growth and assembly of carbon nanotubes for nanoelectronics and nanosensing applications,\u201d presented at SPIE Optics East 2004<\/em>, Philadelphia, PA, USA (2004). (invited talk)<\/strong>; Proceedings of the SPIE \u2013 The International Society for Optical Engineering<\/em> 5593<\/strong>, 28 (2004).<\/li>\n
    52. A. Nojeh, Ant Ural<\/strong>, R. F. Pease, and H. Dai, “Electric-field-directed growth of carbon nanotubes in two dimensions,” presented at the 48th International Conference on Electron, Ion, and Photon Beam Technology and Nanofabrication<\/em> (EIPBN 2004)<\/em>, San Diego, CA, USA (2004).<\/li>\n
    53. A. Javey, H. Kim, M. Brink, Q. Wang, Ant Ural<\/strong>, J. Guo, P. McIntyre, P. McEuen, M. Lundstrom, and H. Dai, “High k dielectrics for advanced carbon nanotube transistors and logic,” presented at the American Physical Society (APS) March Meeting<\/em>, Austin, TX, USA (2003).<\/li>\n
    54. Ant Ural<\/strong>, S. Koh, P. B. Griffin, and J. D. Plummer, \u201cCoupled diffusion of dopants,\u201d presented at TECHCON 2000<\/em>, Phoenix, AZ, USA (2000).<\/li>\n
    55. Ant Ural<\/strong>, S. Koh, P. B. Griffin, and J. D. Plummer, \u201cWhat does self-diffusion tell us about ultra shallow junctions?\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (2000); Materials Research Society Symposium Proceedings<\/em> 610<\/strong>, B4.11 (2000).<\/li>\n
    56. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cNonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures,\u201d presented at the 20th International Conference on Defects in Semiconductors (ICDS- 20)<\/em>, Berkeley, CA, USA (1999).<\/li>\n
    57. Ant Ural<\/strong>, P. B. Griffin, and J. D. Plummer, \u201cExperimental study of self-diffusion in silicon using isotopically enriched structures,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (1999); Materials Research Society Symposium Proceedings<\/em> 568<\/strong>, 97 (1999).<\/li>\n
    58. P. B. Griffin and Ant Ural<\/strong>, \u201cInteractions between silicon self-diffusion and dopant diffusion,\u201d presented at the 195th<\/sup> Electrochemical Society (ECS) Meeting<\/em>, Seattle, WA, USA (1999). (invited talk)<\/strong><\/li>\n
    59. S. K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, M. C. Johnson, Ant Ural<\/strong>, and P. B. Griffin, \u201cLinking ab initio<\/em> energetics to experiment: Kinetic Monte Carlo simulation of transient enhanced diffu\u00adsion of B in Si,\u201d presented at the Materials Research Society (MRS) Spring Meeting<\/em>, San Francisco, CA, USA (1998); Materials Research Society Symposium Proceedings<\/em> 538<\/strong>, 291 (1998).<\/li>\n<\/ol>\n

      Book Chapters<\/h2>\n
        \n
      1. H. Xie, Y. Zhou, J. Johnson, and Ant Ural<\/strong>, \u201cMonolithic integration of carbon nanotubes and CMOS,\u201d in Graphene, Carbon Nanotubes, and Nanostructures: Techniques and Applications<\/em>, edited by J. E. Morris and K. Iniewski, CRC Press (2016), p. 131-163.<\/li>\n<\/ol>\n

        Patents<\/h2>\n
          \n
        1. H. Xie and Ant Ural<\/strong>, \u201cRoom temperature carbon nanotubes integrated on CMOS,\u201d US Patent\u00a08618611 (2013).<\/li>\n<\/ol>\n

          \u00a0<\/h2>\n

          \u00a0<\/h2>\n

           <\/p>\n","protected":false},"excerpt":{"rendered":"

          Google Scholar\u00a0page ORCID ID: 0000-0001-6971-2063 ResearcherID: L-5252-2014\u00a0   Journal Publications J. Hicks, J. Li, C. Ying, and Ant Ural, “Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks,” Journal of Applied Physics 123, 204309 (2018). [link]\u00a0 (highlighted in AIP Scilight and selected as a Featured Article)\u00a0 Y. An, A. Shekhawat, […]<\/p>\n","protected":false},"author":72,"featured_media":0,"parent":0,"menu_order":3,"comment_status":"closed","ping_status":"closed","template":"page-templates\/page-sidebar-none.php","meta":{"_acf_changed":false,"inline_featured_image":false,"featured_post":"","footnotes":"","_links_to":"","_links_to_target":""},"class_list":["post-11","page","type-page","status-publish","hentry"],"acf":[],"_links":{"self":[{"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/pages\/11","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/users\/72"}],"replies":[{"embeddable":true,"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/comments?post=11"}],"version-history":[{"count":20,"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/pages\/11\/revisions"}],"predecessor-version":[{"id":896,"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/pages\/11\/revisions\/896"}],"wp:attachment":[{"href":"https:\/\/faculty.eng.ufl.edu\/ant-ural\/wp-json\/wp\/v2\/media?parent=11"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}